Si4704DY
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
20
FEATURES
I
D
(A)
6.5
5.5
r
DS(on)
(W)
0.017 @ V
GS2
= 4.5 V
0.024 @ V
GS2
= 2.5 V
D
TrenchFETr Power MOSFET
D
LITTLE FOOT
Plust
Level Shifrt
APPLICATIONS
D
Low Voltage BUS/Load Switching
5, 6, 7
3, 4
Q2
8
SO-8
S
1
V
ON/OFF
S
2
S
2
1
2
3
4
Top View
Ordering Information: Si4704DY
Si4704DY-T1 (with Tape and Reel)
8
7
6
5
V
HV
V
IN
V
IN
V
IN
V
ON/OFF
V
HV
V
IN
S
2
2
Q1
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
Q2 Gate-Drive Voltage Referenced to S1 or S2
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
W)
Continuous
a
Pulsed
b
Symbol
V
IN
V
HV
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
20
20
8
6.5
"30
−1.15
1.25
−55
to 150
3
Unit
V
A
W
_C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t = steady state)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJC
Typical
80
25
Maximum
100
30
Unit
_C/W
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
V
IN
= 20 V, V
ON/OFF
= 0 V, V
HV
= 0 V
I
S
=
−1.15
A
0.65
1
1
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
ON Characteristics
On-Resistance (Q2)
On-State (Q2) Drain-Current
r
DS(on)
I
D(on)
V
ON/OFF
= 0 V, I
D
= 7 A, V
HV
= 4.5 V, V
S2
= 0 V
V
ON/OFF
= 0 V, I
D
= 6 A, V
HV
= 2.5 V, V
S2
= 0 V
V
IN-OUT
v
0.1 V, V
IN
= 5 V, V
ON/OFF
= 0 V, V
HV
= 4.5 V
20
0.014
0.0195
0.017
0.024
W
A
Notes
a. Surface Mounted on FR4 Board.
b. Pulse test: pulse width
v300
ms,
duty cycle
v2%.
Document Number: 71929
S-32422—Rev. B, 24-Nov-03
www.vishay.com
1
Si4704DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
(V)
(V)
0.6
T
J
= 125_C
0.4
T
J
= 25_C
0.1
0.0
0
6
12
I
D
−
(A)
18
24
30
0.2
0.3
0.2
T
J
= 125_C
T
J
= 25_C
V
ON/OFF
= 0 V
V
HV
= 4.5 V
V
S2
= 0 V
V
DS
vs. I
D
1.0
V
ON/OFF
= 0 V
V
HV
= 2.5 V
V
S2
= 0 V
V
DS
vs. I
D
0.8
V
DS
V
DS
0.0
0
6
12
18
I
D
−
(A)
24
30
0.10
V
DS
vs. V
HV
0.5
V
DS
vs. V
HV
0.08
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
(V)
0.4
V
ON/OFF
= 0 V
I
DS
= 5 A
V
S2
= 0 V
V
DS
(V)
0.06
0.3
V
DS
T
J
= 125_C
0.04
0.2
T
J
= 125_C
0.1
0.02
T
J
= 25_C
0
2
4
6
V
HV
−
(V)
8
10
0.00
0.0
0
2
4
T
J
= 25_C
6
V
HV
−
(V)
8
10
0.10
r
DS
vs. V
HV
Normalized On-Resistance vs. Junction Temperature
1.8
1.6
1.4
1.2
V
HV
= 4.5 V
1.0
0.8
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
r
SS(on)
−
On-Resistance (
W
)
0.06
0.04
T
J
= 125_C
0.02
T
J
= 25_C
0.00
0
2
4
6
V
HV
−
(V)
8
10
r
DS(on)
−
On-Resistance (
W)
(Normalized)
0.08
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
0.6
−50
−25
0
25
50
75
100 125
T
J
−
Junction Temperature (_C)
150
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2
Document Number: 71929
S-32422—Rev. B, 24-Nov-03
Si4704DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
t
d(on)
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
Time (
mS)
V
IN
= 5 V
V
IN
= 3.3 V
12
30
50
t
rise
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
24
40
Time (
mS)
18
30
V
IN
= 3.3 V
20
V
IN
= 5 V
6
10
0
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
0.5
t
d(off)
Variation with R
G
/V
IN
200
t
f
Variation with R
G
/V
IN
0.4
V
IN
= 3.3 V
160
V
IN
= 5 V
Time (
mS)
0.3
V
IN
= 5 V
Time (
mS)
120
V
IN
= 3.3 V
80
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
0.2
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
0.1
40
0.0
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
100
Limited
by r
DS(on)
10
I
D
−
Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms
1
10 ms
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Document Number: 71929
S-32422—Rev. B, 24-Nov-03
www.vishay.com
3
Si4704DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL APPLICATION CIRCUIT
5V
5, 6, 7
V
IN
8
V
HV
2
V
ON/OFF
1
S
1
Q1
Q2
3, 4
S
2
R
L
1.5-V BUS
NOTE: Voltage difference between pull-up voltage, 5 V, and BUS voltage, 1.5 V, should be greater than 2.5 V.
www.vishay.com
Document Number: 71929
S-32422—Rev. B, 24-Nov-03
4
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