BL
GALAXY ELECTRICAL
FAST RECOVERY RECT IFIER
FEATURES
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries
U/L
recognition
94V-0
TVR4J---TVR4N
VOLTAGE RANGE: 600 ---1000 V
CURRENT: 1.5 A
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO-15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
TVR4J
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
TVR4N
1000
700
1000
1.5
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
600
420
600
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
50.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.3
5.0
100.0
1000
20
40
-55----+150
-55----+150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance f rom junction to am bient.
Document Number 0261070
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
N.1.
10
N.1.
TVR4J - - - TVR4N
t
rr
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
0
-0.25A
-1.0A
NOTE
S:1.RISETIM =7ns M INP IM E AN =1M .22pF
E
AX. UT P D CE
2.R TIM =10ns M SOURCEIM E
ISE E
AX.
P DANCE
=5O
SE TIM BASEFOR50/100 ns /cm
T E
1cm
FIG.2 --FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
50
FIG.3 --PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
AMPERES
1.50
1.25
40
T
J
=125
℃
8.3ms Single Half
Sine-Wave
1.00
30
.75
20
.50
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
25
50
75
100
125
150
175
10
.25
0
0
0
20
40
60
80
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
10
T
J
=25
Pulse Width=300
µ
S
100
60
JUNCTION CAPACITANCE,pF
4
2
1. 0
0 .4
0 .2
0 .1
0. 0 6
0.04
0. 0 2
0 .0 1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
40
20
10
4
T
J
=25
f=1M
Hz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0261070
BL
GALAXY ELECTRICAL
2.
Microchip MCU
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