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TVR2G

产品描述0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小46KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
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TVR2G概述

0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-41

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BL
FEATURES
GALAXY ELECTRICAL
TVR2B---TVR2J
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 0.5 A
FAST RECOVERY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
TVR2B
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
TVR2D
200
140
200
0.5
TVR2G
400
280
400
TVR2J
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.4
5.0
100.0
1000
15
50
- 55---- +150
- 55---- + 150
V
A
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261069
BL
GALAXY ELECTRICAL
1.

TVR2G相似产品对比

TVR2G TVR2B TVR2D TVR2J
描述 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 600 V, SILICON, SIGNAL DIODE, DO-41

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