BL
FEATURES
GALAXY ELECTRICAL
1N5059---1N5062
VOLTAGE RANGE:
200---800
V
CURRENT:
2.0
A
PLASTIC SILICON RECTIFIER
Low cos t
Diffus ed junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
DO -
15
MECHANICAL DATA
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39gram s
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N5059
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=50
1N5060
400
280
400
2.0
1N5061
600
420
600
1N5062
800
560
800
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous
forw ard voltage
Maximum reverse current
@T
J
=125
@1.0A
@
2.5A
@T
A
=25
(Note1)
(Note2)
(Note3)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
50.0
1.0
1.15
1.0
100
4.0
40
45
- 55 ----- + 175
- 55 ----- + 175
A
V
A
µ
s
pF
at rated DC blocking voltage @T
A
=150
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
K/W
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
www.galaxycn.com
Document Number 0260043
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
1N5059---1N5062
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t
rr
50
N 1.
10
N 1.
+0.5A
0
PULSE
GENERATOR
(NOTE2)
D.U.T.
(+)
25VDC
(approx)
(-)
-0.25A
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIMEBASEFOR 2.0
µ
s/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
20
10
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
2.0
1.6
1.2
0.8
0.4
0
Single Phase
Half Wave 50H
Z
Resistive or
Inductive Load
T
J
=25
Pulse Width=300
µ
S
1.0
AMPERES
0.1
0.01
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.5--TYPICAL JUNCTION CAPACITANCE
50
40
30
20
10
0
1
5
10
50
100
T
J
=25℃
10ms Single Half
Sine-Wave
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
6
4
T
J
=25
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
NUMBER OF CYCLES AT 50Hz
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0260043
BL
GALAXY ELECTRICAL
2
.
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