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1N5711W

产品描述SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小145KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
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1N5711W概述

SILICON, SIGNAL DIODE

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BL
Galaxy Electrical
Surface mount schottky barrier diode
FEATURES
Low Forward Voltage Drop.
Production specification
1N5711W
Pb
Lead-free
Guard Ring Construction for Transient Protection.
Fast Switching Time.
Low Reverse Capacitance.
Surface Mount Package Ideally Suited for Automatic Insertion.
APPLICATIONS
Surface mount fast switching schottky diode.
SOD-123
ORDERING INFORMATION
Type No.
1N5711W
Marking
SA
Package Code
SOD-123
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Forward Continuous Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Rage
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
P
d
R
θJA
T
j
,T
STG
Value
70
Unit
V
49
15
250
600
-65 to+150
V
mA
mW
℃/W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Symbol
V
(BR)R
V
FM
Min
70
-
Max
-
0.41
1.00
200
2.0
1.0
Unit
V
V
Test Condition
I
R
=1.0μA
I
F
=1.0mA
I
F
=15mA
V
R
=50V
V
R
=0V,f=1.0MHz
I
F
=I
R
=10mA,
I
rr
=0.1×I
R
,R
L
=100Ω
Reverse Current
Capacitance between
terminals
Reverse Recovery Time
I
R
C
j
t
rr
-
-
-
nA
pF
ns
Document number: BL/SSSKA004
Rev.A
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