HB56UW1673EJN-5/6,
HB56UW1665EJN-5/6
128MB Unbuffered EDO DRAM DIMM
16-Mword
×
72/64-bit, 4k Refresh, 1 Bank Module
(18/16 pcs of 16M
×
4 components)
ADE-203-859A (Z)
Rev. 1.0
May 22, 1998
Description
The HB56UW1673EJN, HB56UW1665EJN belong to 8-byte DIMM (Dual in-line Memory Module)
family , and have been developed an optimized main memory solution for 4 and 8-byte processor
applications. The HB56UW1673EJN is a 16 M
×
72 Dynamic RAM Module, mounted 18 pieces of 64-
Mbit DRAM (HM5165405) sealed in SOJ package and 1 piece of serial EEPROM for Presence Detect
(PD). The HB56UW1665EJN is a 16 M
×
64 Dynamic RAM Module, mounted 16 pieces of 64-Mbit
DRAM (HM5165405) sealed in SOJ package and 1 piece of serial EEPROM for Presence Detect (PD).
The HB56UW1673EJN, HB56UW1665EJN offer Extended Data Out (EDO) Page Mode as a high speed
access mode. An outline of the HB56UW1673EJN, HB56UW1665EJN Series are 168-pin socket type
package (dual lead out). Therefore, the HB56UW1673EJN, HB56UW1665EJN make high density
mounting possible without surface mount technology. The HB56UW1673EJN, HB56UW1665EJN provide
common data inputs and outputs. Decoupling capacitors are mounted beside each SOJ on the its module
board.
Features
•
168-pin socket type package (Dual lead out)
Outline: 133.35 mm (Length)
×
25.40 mm (Height)
×
9.00 mm (Thickness)
Lead pitch : 1.27 mm
•
Single 3.3 V supply: 3.3 V
±
0.3 V
•
High speed
Access time: t
RAC
= 50 ns/60 ns (max)
Access time: t
CAC
= 13 ns/15 ns (max)
HB56UW1673EJN-5/6, HB56UW1665EJN-5/6
•
Low power dissipation
Active mode: 8.42 W/7.13 W (max) (HB56UW1673EJN Series)
Active mode: 7.49 W/6.34 W (max) (HB56UW1665EJN Series)
Standby mode (TTL): 129.6 mW (max) (HB56UW1673EJN Series)
Standby mode (TTL): 115.2 mW (max) (HB56UW1665EJN Series)
Standby mode (CMOS): 32.4 mW (max) (HB56UW1673EJN Series)
Standby mode (CMOS): 28.8 mW (max) (HB56UW1665EJN Series)
•
JEDEC standard outline unbuffered 8-byte DIMM
•
EDO page mode capability
•
4096 refresh cycles: 64 ms
•
3 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Ordering Information
Type No.
HB56UW1673EJN-5
HB56UW1673EJN-6
HB56UW1665EJN-5
HB56UW1665EJN-6
Access time
50 ns
60 ns
50 ns
60 ns
Package
168-pin dual lead out
socket type
Contact pad
Gold
2
HB56UW1673EJN-5/6, HB56UW1665EJN-5/6
Pin Description
Pin name
A0 to A11
Function
Address input
Row address
A0 to A11
Column address A0 to A11
Refresh address A0 to A11
DQ0 to DQ63
RAS0, RAS2
CAS0
to
CAS7
WE0, WE2
OE0, OE2
SDA
SCL
SA0 to SA2
CB0 to CB7*
1
V
CC
V
SS
NC
Note:
Data input/output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Serial data out (bit0 to bit7)
Clock for presence detect
Serial address input
Check bit
Power supply
Ground
No connection
1. This function is supported only HB56UW1673EJN Series.
5
PCB设计
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