Bulletin I27231 07/06
UFB200FA20P
Insulated Ultrafast Rectifier Module
Features
•
•
•
•
•
•
•
•
•
•
•
Two Fully Independent Diodes
Ceramic Fully Insulated Package (V
ISOL
= 2500V AC)
Ultrafast Reverse Recovery
Ultrasoft Reverse Recovery Current Shape
Low Forward Voltage
Optimized for Power Conversion: Welding and Industrial SMPS Applications
Industry Standard Outline
Plug-in Compatible with other SOT-227 Packages
Easy to Assemble
Direct Mounting to Heatsink
Lead-Free
t
rr
= 45ns
I
F(AV)
= 240A
@ T
C
= 90°C
V
R
= 200V
Description
The UFB200FA20P insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery
rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum
doping life-time control, provide a Ultrasoft recovery current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-
DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
Absolute Maximum Ratings
Parameters
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
STG
Cathode-to-Anode Voltage
Continuous Forward Current, T
C
= 90°C
Single Pulse Forward Current, T
C
= 25°C
Max. Power Dissipation, T
C
= 90°C
Operating Junction and Storage Temperatures
Per Diode
Per Diode
Per Module
Max
200
120
1700
240
2500
- 55 to 150
Units
V
A
W
V
°C
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Case Styles
1
4
SOT-227
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3
1
UFB200FA20P
Bulletin I27231 07/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified) per diode
Parameters
V
BR
V
FM
Cathode Anode
Breakdown Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
-
-
-
200
-
1.1
0.95
50
2
-
V
V
V
μA
mA
pF
I
R
= 100μA
I
F
= 120A
I
F
= 120A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
I
RM
Reverse Leakage Current
-
-
C
T
Junction Capacitance
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified) per diode
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
34
58
5.1
10.3
87
300
45
-
-
-
-
-
-
ns
I
F
= 1.0A, di
F
/dt = 200A/μs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
I
F
= 150A
V
R
= 160V
di
F
/dt = 200A/μs
I
RRM
Peak Recovery Current
-
-
A
T
J
= 25°C
T
J
= 125°C
Q
rr
Reverse Recovery Charge
-
-
nC
T
J
= 25°C
T
J
= 125°C
Thermal - Mechanical Characteristics
Parameters
R
thJC
R
thCS
Wt
T
Junction to Case, Single Leg Conducting
Both Leg Conducting
Case to Heat Sink, Flat, Greased Surface
Weight
Mounting Torque
0.05
30
1.3
g
(N*m)
Min
Typ
Max
0.5
0.25
Units
°C/W
K/W
2
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UFB200FA20P
Bulletin I27231 07/06
1000
1000
100
10
1
0.1
0.01
0.001
0
100
200
300
400
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Tj = 150˚C
125˚C
Reverse Current - I
R
(μA)
25˚C
Instantaneous Forward Current - I
F
(A)
100
T
J
= 150˚C
T
J
= 25˚C
10000
Junction Capacitance - C
T
(pF)
10
T
J
= 25˚C
1000
1
0.2
100
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
1
Thermal Impedance Z
thJC
(°C/W)
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
0.1
t1
Single Pulse
(Thermal Resistance)
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (per diode)
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UFB200FA20P
Bulletin I27231 07/06
150
Allowable Case Temperature (°C)
150
Average Power Loss ( W )
140
130
120
110
100
90
Square wave (D = 0.50)
Rated Vr applied
120
RMS Limit
DC
90
60
30
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
80
see note (3)
70
0
20 40 60 80 100 120 140 160
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (per leg)
0
20 40 60 80 100 120 140 160
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
(per leg)
70
IF = 150A
IF = 75A
900
800
700
Vr = 160V
Tj = 125˚C
Tj = 25˚C
60
50
Qrr ( nC )
trr ( ns )
600
500
400
300
200
IF = 150A
IF = 75A
40
30
20
Vr = 160V
Tj = 125˚C
Tj = 25˚C
100
1000
0
100
10
100
di
F
/dt (A/μs )
di
F
/dt (A/μs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di
F
/dt
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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UFB200FA20P
Bulletin
I27231
07/06
3
I
F
t
rr
t
a
t
b
4
V
R
= 200V
0
2
Q
rr
I
RRM
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
1. di
F
/dt - Rate of change of current through
zero crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from
zero crossing point of negative going I
F
to
point where a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
1
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
di
f
/dt
4. Q
rr
- Area under curve defined by
t
rr
and I
RRM
Q rr =
t rr x I
2
RRM
5. di
(rec) M
/ dt - Peak rate of change
of current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
SOT-227 Package Details
LEAD ASSIGNMENTS
FRED
Notes:
1. Dimensioning & tolerancing per ANSI Y14.5M-1982.
2. Controlling dimension: millimeter.
3. Dimensions are shown in millimeters (inches).
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