TSSP4400
GaAs/GaAlAs Infrared Emitting Diode in Sideview Package
Description
TSSP4400 is a high intensity infrared emitting diode in
GaAlAs on GaAs technology, molded in a clear, blue–
grey tinted plastic package with spherical side view lens.
The device is spectrally matched to silicon photodiodes
and phototransistors.
Features
D
D
D
D
D
D
High radiant power and high radiant intensity
Suitable for high pulse current operation
Low forward voltage
Angle of half intensity
ϕ
=
±
22
°
Peak wavelength
l
p
= 925 nm
High reliability
94 8491
Applications
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN
photodiodes or phototransistors.
Infrared remote control and free air transmission systems for long transmission distance and medium wide angle
requirements in combination with PIN photo diodes or photo modules.
Suitable as replacement of CQX47.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2.0
170
100
–55...+100
–55...+100
260
450
Unit
V
mA
mA
A
mW
°
C
°
C
°
C
°
C
K/W
t
p
/T=0.5, t
p
=100
m
s
t
p
=100
m
s
t
x
5sec, 2 mm from case
TELEFUNKEN Semiconductors
Rev. A3, 16-Oct-96
1 (5)
TSSP4400
10
1
I
e
– Radiant Intensity ( mW/sr )
10
2
94 8189 e
1000
I
F
– Forward Current ( A )
t
p
/ T = 0.01, I
FM
= 2 A
0.02
10
0
0.05
0.1
0.2
0.5
10
–1
10
–2
100
10
1
0.1
10
–1
10
0
10
1
t
p
– Pulse Duration ( ms )
10
0
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
94 7947 e
Figure 3. Pulse Forward Current vs. Pulse Duration
10
4
I
F
– Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
1000
10
3
F
e
– Radiant Power ( mW )
4
100
10
2
t
p
= 100
m
s
t
p
/ T = 0.001
10
10
1
1
10
0
0
94 7952 e
0.1
1
2
3
10
0
94 7965 e
V
F
– Forward Voltage ( V )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 4. Forward Current vs. Forward Voltage
1.2
V
Frel
– Relative Forward Voltage
1.1
I
e rel
;
F
e rel
I
F
= 10 mA
1.0
0.9
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
I
F
= 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
100
94 7993 e
0
–10 0 10
50
100
140
94 7990 e
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
TELEFUNKEN Semiconductors
Rev. A3, 16-Oct-96
3 (5)
TSSP4400
Ozone Depleting Substances Policy Statement
It is the policy of
TEMIC TELEFUNKEN microelectronic GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH
semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC
can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A3, 16-Oct-96
5 (5)
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