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GBJ2004

产品描述3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小37KB,共2页
制造商HY Electronic
官网地址http://www.hygroup.com.tw
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GBJ2004概述

3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ2004规格参数

参数名称属性值
厂商名称HY Electronic
Reach Compliance Codeunknow
二极管类型BRIDGE RECTIFIER DIODE

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GBJ20005 thru GBJ2010
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded plastic
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 20
Amperes
GBJ
? .134(3.4)
? .122(3.1)
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
technique results in inexpensive product
The plastic material has UL flammability
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.106(2.7)
.096(2.3)
+
_
~ ~
.441(11.2)
.425(10.8)
classification 94V-0
.114(2.9)
.098(2.5)
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 10.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
(with heatsink Note 2)
@ T
C
=100℃ (without heatsink)
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBJ
20005
50
30
50
GBJ
2001
100
70
100
GBJ
2002
200
140
200
GBJ
2004
400
280
400
20.0
3.6
260
1.1
10.0
500
240
60
0.8
-55 to +150
-55 to +150
GBJ
2006
600
420
600
GBJ
2008
800
560
800
GBJ
2010
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
uA
A
2
s
pF
℃/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 300mm*300mm*1.6mm cu plate heatsink.
~ 321 ~

GBJ2004相似产品对比

GBJ2004 GBJ20005 GBJ2002 GBJ2001 GBJ2010 GBJ2006 GBJ2008
描述 3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 20 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
厂商名称 HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic
Reach Compliance Code unknow unknow unknow unknown unknown unknow unknown
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

 
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