1N914
FAST SWITCHING DIODE
DO - 35
.020
TYP.
(0.51)
1.083(27.5)
MIN
FEATURES
●
High reliability
●
High conductance
●
Fast switching speed (t
rr
≤4ns)
APPLICATIONS
●
For general purpose swiching applications
CONSTRUCTION
●
Silicon epitaxial planar
.150(3.8)
MAX
.079
MAX
(2.0)
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATING
Parameter
Non repetitive peak reverse voltage
(T
J
=25℃)
Test Conditions
Symbol
V
RM
V
RRM
Value
100
Unit
V
V
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward current
Average rectified current
Non repetitive peak forward surge current
Power dissipation
Storge temperature range
75
75
V
RWM
V
R
V
R(RMS)
I
F
75
53
V
V
V
mA
mA
A
A
mW
300
200
1
Half wave rectification with resistive
load and f>50MHz
t=1s
t=1us
I
FAV
I
FSM
I
FSM
Pd
Ts
T
g
4
500
I=4mm T
L
=25℃
-55 ~ +175
℃
MAXIMUM THERMAL RESISTANCE
Parameter
Junction ambient
(T
J
=25℃)
Test Conditions
I=4mm T
L
=constant
Symbol
Rth
JA
Value
300
Unit
K/W
ELECTRICAL CHARACTERISTICS
Parameter
Forward voltage
Peak reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
T
J
=25℃
Test Conditions
I
F
=10mA
V
R
=20V
V
R
=20V, Tj=150
℃
V
R
=75V
Symbol
V
F
I
R
I
R
I
R
V
R
C
D
trr
100
4
4
Min
Typ
Max
1
25
50
5
Unit
V
nA
uA
uA
V
pF
ns
I
R
=100uA
V
R
=0, f=1MHZ
I
F
=10mA to I
R
=1mA,V
R
=6V,R
L
=100Ω
~ 419 ~
RATING AND CHARACTERISTIC CURVES
1N914
FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS
FORWARD CURRENT VS. AMBIENT TEMPERATURE
100
600
FIG. 2 -FORWARD CURRENT VS.FORWARD
VOLTAGE
T
J
=25°C
TYPICAL
I
F
(m A)
50
400
I
F
(m A)
T
J
=25°C
TYPICAL VALUES
200
0
0
100
Tamb(°C)
200
0
0
1
V
F
(V)
2
T
J
=25°C
MAXIMUM VALUES
FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE
1000
V
R
=75V
MAXIMUM VALUES
100
1.0
1.2
FIG. 4 -DIODE CAPACITANCE VS. REVERSE
VOLTAGE (TYPICAL VALUES)
I
R (uA)
10
V
R
=75V
TYPICAL VALUES
1
0.6
V
R
=20V
TYPICAL VALUES
0.1
0.4
0
0.01
0
100
T
J
((°C)
200
10
V
R
(°C)
20
f=1M
HZ
,T
J
=25°C
Cd
(pF)
0.8
~ 420 ~
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