SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK3013
(FP16W60VX2)
600V 16A
FEATURES
●
Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case :
:
E-pack
Case ITO-3P
(Unit : mm)
Especially, input capacitance
at 0 biass is small.
●
The static Rds(on) is small.
●
The switching time is fast.
●
Avalanche resistance guaranteed.
APPLICATION
●
Switching power supply of
AC 100-200V input
●
Inverter
●
Power Factor Control Circuit
RATINGS
●Absolute
Maximum Ratings
（Tc
= 25℃）
Item
Symbol
Conditions
Storage Temperature
T
stg
T
ch
Channel Temperature
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current（DC）
I
DP
Continuous Drain Current（Peak)
Continuous Source Current（DC）
I
S
Total Power Dissipation
P
T
I
AS
Single Pulse Avalanche Current
Tch = 25℃
Vdis
Terminals to case, AC
1
minute
Dielectric Strength
TOR
(Recommended torque : 0.5N½m）
Mounting Torque
Ratings
-55½150
150
600
±30
16
48
16
70
16
2
0.8
Unit
℃
V
A
W
A
kV
N½m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power MOSFET
●Electrical
Characteristics Tc = 25℃
Item
Symbol
V
(BR)DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate-Source Leakage Current
g
fs
Forward Tran½conductance
Static Drain-Source On-½tate Resistance
R
DS(ON)
V
TH
Gate Threshold Voltage
V
SD
Source-Drain Diode Forward Voltage
θjc
Thermal Resistance
Total Gate Charge
Qg
Input Capacitance
C
iss
Reverse Transfer Capacitance
C
rss
Output Capacitance
C
oss
Turn-On Time
t
on
Turn-Off Time
t
off
Conditions
2SK3013 ( FP16W60VX2 )
Min.
600
Typ.
Max.
250
±0.1
6.2
2.5
10.0
0.45
3
Unit
V
μA
S
Ω
V
I
D
=
1mA,
V
GS
= 0V
V
DS
= 600V, V
GS
= 0V
V
GS
=
±30V,
V
DS
= 0V
I
D
= 8A, V
DS
=
10V
I
D
= 8A, V
GS
=
10V
I
D
=
1mA,
V
DS
=
10V
I
S
= 8A, V
GS
= 0V
junction to case
V
GS
=
10V,
I
D
=
16A,
V
DD
= 400V
V
DS
=
10V,
V
GS
= 0V, f =
1MH
Z
I
D
= 8A, V
GS
=
10V,
R
L
=
19Ω
85
2300
180
480
130
260
0.6
3.5
1.5
1.78 ℃/Ｗ
nC
pF
280
500
ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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