Standard SRAM, 512KX8, 55ns, CMOS, CDSO32, CERAMIC, SOJ-32
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
零件包装代码 | SOJ |
包装说明 | SOJ, |
针数 | 32 |
Reach Compliance Code | compliant |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 55 ns |
其他特性 | LOW POWER STANDBY MODE |
JESD-30 代码 | R-CDSO-J32 |
JESD-609代码 | e0 |
长度 | 20.955 mm |
内存密度 | 4194304 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 512KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | SOJ |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
筛选级别 | MIL-STD-883 |
座面最大高度 | 4.064 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | TIN LEAD |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 11.4935 mm |
Base Number Matches | 1 |
AS5C4009LLECJ-55/883C | AS5C4009LLECJ-100/883C | AS5C4009LLECJ-85/883C | AS5C4009LLCW-70/883C | AS5C4009LLCW-85/883C | AS5C4009LLCW-100/883C | AS5C4009LLECJ-70/883C | AS5C4009LLCW-55/883C | |
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描述 | Standard SRAM, 512KX8, 55ns, CMOS, CDSO32, CERAMIC, SOJ-32 | Standard SRAM, 512KX8, 100ns, CMOS, CDSO32, CERAMIC, SOJ-32 | Standard SRAM, 512KX8, 85ns, CMOS, CDSO32, CERAMIC, SOJ-32 | Standard SRAM, 512KX8, 70ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 | Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 | Standard SRAM, 512KX8, 100ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 | Standard SRAM, 512KX8, 70ns, CMOS, CDSO32, CERAMIC, SOJ-32 | Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | SOJ | SOJ | SOJ | DIP | DIP | DIP | SOJ | DIP |
包装说明 | SOJ, | SOJ, | SOJ, | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | SOJ, | DIP, DIP32,.6 |
针数 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compli |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
最长访问时间 | 55 ns | 100 ns | 85 ns | 70 ns | 85 ns | 100 ns | 70 ns | 55 ns |
其他特性 | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE |
JESD-30 代码 | R-CDSO-J32 | R-CDSO-J32 | R-CDSO-J32 | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 | R-CDSO-J32 | R-CDIP-T32 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 20.955 mm | 20.955 mm | 20.955 mm | 40.64 mm | 40.64 mm | 40.64 mm | 20.955 mm | 40.64 mm |
内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | SOJ | SOJ | SOJ | DIP | DIP | DIP | SOJ | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
座面最大高度 | 4.064 mm | 4.064 mm | 4.064 mm | 4.3434 mm | 4.3434 mm | 4.3434 mm | 4.064 mm | 4.3434 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | NO | NO | NO | YES | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | J BEND | J BEND | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 11.4935 mm | 11.4935 mm | 11.4935 mm | 15.24 mm | 15.24 mm | 15.24 mm | 11.4935 mm | 15.24 mm |
厂商名称 | - | - | - | Micross | Micross | Micross | Micross | Micross |
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