CES521
Schottky Barrier Diode
Silicon Epitaxial
CES521
1. Applications
•
High-Speed Switching
2. Features
(1)
(2)
Low forward voltage: V
F(3)
= 0.5 V (max).
Small and compact ESC package, equivalent to SOD-523 and SC-79
packages.
3. Packaging and Internal Circuit
1: Cathode
2: Anode
ESC
Start of commercial production
1
2010-11
2014-04-14
Rev.6.0
CES521
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
)
25
Characteristics
Reverse voltage
Peak forward current
Average rectified current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
Storage temperature
Operating temperature
Symbol
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
T
opr
Note
(Note 1)
(Note 2)
Rating
30
300
200
1
150
125
-55 to 125
-40 to 100
A
mW
Unit
V
mA
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10ms pulse.
Note 2: Mounted on a glass-epoxy circuit board of 20 mm
×
20 mm, Pad dimension of 4 mm
×
4 mm.
25
5. Electrical Characteristics (Unless otherwise specified, Ta = 25
)
Characteristics
Forward voltage
Symbol
V
F(1)
V
F(2)
V
F(3)
Reverse current
Total capacitance
I
R(1)
I
R(2)
C
t
Note
I
F
= 1 mA
I
F
= 5 mA
I
F
= 200 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 0 V, f = 1 MHz
Test Condition
Min
Typ.
0.20
0.24
0.45
26
Max
0.5
20
30
pF
µA
Unit
V
6. Marking
Fig. 6.1 Marking
Marking Code
RB
Part Number
CES521
7. Usage Considerations
•
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2
2014-04-14
Rev.6.0
CES521
9. Characteristics Curves (Note)
Fig. 9.1 I
F
- V
F
Fig. 9.2 I
R
- V
R
Fig. 9.3 C
t
- V
R
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
4
2014-04-14
Rev.6.0
NXP MCU
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