BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
Rev. 04 — 4 February 2008
Product data sheet
1. Product profile
1.1 General description
Passivated, guaranteed commutation triacs in a plastic package. The ‘sensitive gate’ E
and ER series are intended for interfacing with low power drivers, including
microcontrollers. The high commutation B series are designed to commutate the full RMS
current at the maximum junction temperature without the aid of a snubber.
1.2 Features
I
Suitable for interfacing with low power
drivers, including microcontrollers
I
Reverse pinning option (ER type)
1.3 Applications
I
Motor controls
I
Solenoid drivers
1.4 Quick reference data
I
I
I
I
I
TSM
≤
12.5 A
I
T(RMS)
≤
1 A
V
DRM
≤
600 V (BTA201-600B/E)
V
DRM
≤
800 V (BTA201-800B/E/ER)
I
I
I
I
I
GT
≤
50 mA (BTA201-600B/800B)
I
GT
≤
10 mA (BTA201-600E/800E/ER)
I
GT
≥
5 mA (BTA201-600B/800B)
I
GT
≥
1 mA (BTA201-600E/800E/ER)
2. Pinning information
Table 1.
Pin
B and E series
1
2
3
ER series
1
2
3
main terminal 1 (T1)
gate (G)
main terminal 2 (T2)
321
Pinning
Description
main terminal 2 (T2)
gate (G)
main terminal 1 (T1)
T2
sym051
Simplified outline
Graphic symbol
T1
G
SOT54 (TO-92)
NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
3. Ordering information
Table 2.
Ordering information
Package
Name
BTA201-600B
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BTA201-600B
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
lead
≤
54.3
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
Conditions
Min
-
-
-
-
-
-
Max
600
600
800
800
800
1
Unit
V
V
V
V
V
A
-
-
-
-
-
-
12.5
13.7
0.78
100
2
5
0.1
+150
125
A
A
A
2
s
A/µs
A
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t
p
= 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA201_SER_B_E_ER_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2008
2 of 12
NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
1.5
P
tot
(W)
1.0
α
α
001aag957
α
= 180°
120°
90°
60°
30°
0.5
0
0
0.2
0.4
0.6
0.8
1.0
I
T(RMS)
(A)
1.2
α
= conduction angle
Fig 1.
16
I
TSM
(A)
12
Total power dissipation as a function of RMS on-state current; maximum values
001aag959
8
I
T
4
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA201_SER_B_E_ER_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2008
3 of 12
NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
10
3
I
TSM
(A)
I
T
003aaa955
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
2
(1)
10
10
−5
10
−4
10
−3
10
−2
t
p
(s)
10
−1
t
p
≤
20 ms
(1) dI
T
/dt limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
001aag961
3
I
T(RMS)
(A)
2
1.2
I
T(RMS)
(A)
1.0
54.3
°C
001aag960
0.8
0.6
1
0.4
0.2
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
≤
54.3
°C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of lead
temperature; maximum values
BTA201_SER_B_E_ER_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2008
4 of 12
NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
150
Max
60
80
-
Unit
K/W
K/W
K/W
thermal resistance from junction to full cycle; see
Figure 6
lead
half cycle; see
Figure 6
thermal resistance from junction to printed-circuit board
ambient
mounted; lead
length = 4 mm
10
2
Z
th(j-lead)
(K/W)
10
(1)
(2)
001aag962
1
10
−1
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional
(2) Bidirectional
Fig 6.
Transient thermal impedance from junction to lead as a function of pulse width
BTA201_SER_B_E_ER_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2008
5 of 12
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