ＲＴ１Ｎ４３１Ｘ SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N431X is a one chip transistor
with built-in bias resistor,PNP type is RT1P431X.
RT1N431U
1.6
OUTLINE
DRAWING
RT1N431C
2.5
UNIT：mm
FEATURE
・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ).
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
①
②
③
0.95
①
②
③
2.9
1.90
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0½0.1
R1
B
(IN)
R2
C
(OUT)
JEITA：－
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：Base
②：Emitter
③：Collector
E
(GND)
RT1N431M
RT1N431S
0.425
4.0
2.1
1.25
0.425
RT1N431T
0½0.1
Equivalent circuit
0.95
0.5
0.2
0.8
0.2
0.65
3.0
0.3
0.4
①
②
③
①
②
③
2.0
1.3
0.65
1.2
0.8
14.0
1.0
1.0
0.1
0.45
0.9
0.7
1.27 1.27
0.4
2.5
①
②
③
JEITA：－
JEDEC：－
Terminal Connector
①：Emitter
②：Collector
③：Base
JEITA：SC-70
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
0½0.1
0.15
0.45
0.4
JEITA：－
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
ISAHAYA ELECTRONICS CORPORATION
0.25
0.4
ＲＴ１Ｎ４３１Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ½
Ｔ½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N431T
RT1N431U
RATING
RT1N431M
50
10
50
100
200
150
RT1N431C
RT1N431S
UNIT
V
V
V
mA
mA
mW
℃
℃
125
（※ ）
+125
-55½+125
125
450
+150
-55½+150
LIMIT
TYP
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
½
ＦＥ
Ｖ
ＣＥ（½½½）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
½
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=10mA
I
C
=10mA，I
B
=0.5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
MIN
50
20
MAX
0.1
UNIT
V
μA
－
V
V
V
kΩ
MHz
0.8
3.3
0.8
V
CE
=6V，I
E
=-10mA
0.1
1.4
1.1
4.7
1.0
200
0.3
2.3
6.1
1.2
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA G E
V S. C OL L EC TOR C U R R EN T
D C F OR W A R D C U R R EN T GA IN
V S. C OL L EC TOR C U R R EN T
100
DC FORWARD CURRENT GAIN h
FE
1000
V
CE
=0.2V
V
CE
=5V
INPUT ON VOLTEGE V
I(ON)
(V)
10
100
1
1
10
COLLECTOR CURRENT I
C
(mA)
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
10
100
1
10
COLLECTOR CURRENT I
C
(mA)
100
1000
COLLECTOR CURRENT Ｉ
Ｃ
（μＡ）
V
CE
=5V
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE V
I(OFF)
(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
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