Freescale Semiconductor
Technical Data
Document Number: MRF6VP11KH
Rev. 0, 1/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
•
Typical Pulsed Performance at 130 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak, Pulse Width = 100
μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Designed for Push - Pull Operation
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP11KHR6
10 - 150 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
PART IS PUSH - PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +110
- 6.0, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle
Symbol
R
θJC
Value
(1,2)
0.03
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6VP11KHR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain - Source Breakdown Voltage
(I
D
= 300 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 1600
μAdc)
Gate Quiescent Voltage
(2)
(V
DD
= 50 Vdc, I
D
= 150 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 4 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.63
2.2
0.28
3
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
100
5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak (200 W Avg.), f = 130 MHz,
100
μsec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
G
ps
η
D
IRL
24
69
—
26
71
- 16
28
—
-9
dB
%
dB
MRF6VP11KHR6
2
RF Device Data
Freescale Semiconductor
V
BIAS
+
C1
+
C2
+
B1
R2
L1
R1
L3
C4
C5
C6
C7
C8
C9
C10
C11
C21
Z10
C13
C14
C15
+
+
V
SUPPLY
+
C3
C16 C17 C18 C19 C20
Z8
Z4
RF
INPUT
Z6
Z12
Z14
Z16
RF
OUTPUT
Z1
Z2
L2
Z3
J1
Z5
C12
T1
C22
Z7
Z9
Z11
Z13
Z15
Z17
T2
DUT
C23
C24
C25
J2
Z18
Z19
C26
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7, Z8, Z9
Z10, Z11
Z12, Z13
0.175″
1.461″
0.080″
0.133″
0.500″
0.102″
0.206″
x 0.082″
x 0.082″
x 0.082″
x 0.193″
x 0.518″
x 0.253″
x 0.253″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z14, Z15
Z16*, Z17*
Z18
Z19
PCB
0.116″ x 0.253″ Microstrip
0.035″ x 0.253″ Microstrip
0.275″ x 0.082″ Microstrip
0.845″ x 0.082″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4, C9, C17
C5, C16
C6, C15
C7
C8
C10, C11, C13, C14
C12
C18, C19, C20
C21, C22
C23
C24, C25
C26
J1, J2
L1
L2
L3*
R1
R2
T1
T2
*L3 is wrapped around R2.
Description
95
Ω,
100 MHz Long Ferrite Bead
47
μF,
50 V Electrolytic Capacitor
22
μF,
35 V Tantalum Capacitor
10
μF,
35 V Tantalum Capacitor
10K pF Chip Capacitors
20K pF Chip Capacitors
0.1
μF,
50 V Chip Capacitors
2.2
μF,
50 V Chip Capacitor
0.22
μF,
100 V Chip Capacitor
1000 pF Chip Capacitors
18 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitors
47 pF Chip Capacitors
75 pF Chip Capacitor
100 pF Chip Capacitors
33 pF Chip Capacitor
Jumpers from PCB to T1 and T2
82 nH Inductor
47 nH Inductor
10 Turn, #18AWG Inductor, Handwound
1 KΩ, 1/4 W Chip Resistor
20
Ω,
3 W Chip Resistor
Balun
Balun
Part Number
2743021447
476KXM050M
T491X226K035AT
T491D106K035AT
ATC200B103KT50XT
ATC200B203KT50XT
CDR33BX104AKYS
C1825C225J5RAC
C1825C223K1GAC
ATC100B102JT50XT
ATC100B180JT500XT
EKME630ELL471MK25S
ATC100B470JT500XT
ATC100B750JT500XT
ATC100B101JT500XT
ATC100B330JT500XT
Copper Foil
1812SMS - 82NJLC
1812SMS - 47NJLC
Copper Wire
PTF561K0000BYEK
5093NW20R00J
TUI - 9
TUO - 4
Vishay
Vishay
Comm Concepts
Comm Concepts
CoilCraft
CoilCraft
Manufacturer
Fair - Rite
Illinois Cap
Kemet
Kemet
ATC
ATC
Kemet
Kemet
Kemet
ATC
ATC
Multicomp
ATC
ATC
ATC
ATC
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
3
C1
C19
C17
C16
C15
B1
L1
C4
C5
C6
C18
C2 C3
C7
C8
C9
C11
C20
C14
L3, R2*
R1
C10
J1
C21
T1
C24
C13
T2
C25
J2
L2
C12
CUT OUT AREA
C23
C22
C26
MRF6VP11KH
Rev. 3
*
L3 is wrapped around R2.
Figure 3. MRF6VP11KHR6 Test Circuit Component Layout
MRF6VP11KHR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
C
iss
T
J
= 200°C
I
D
, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
C
oss
100
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
T
J
= 175°C
T
J
= 150°C
10
100
10
C
rss
T
C
= 25°C
1
0
10
20
30
40
50
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
1
1
10
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
100
200
Figure 4. Capacitance versus Drain - Source Voltage
27
26
G
ps
, POWER GAIN (dB)
25
24
23
22
21
20
10
G
ps
80
70
η
D,
DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (dBm)
60
50
40
30
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 130 MHz 20
Pulse Width = 100
μsec,
Duty Cycle = 20%
10
1000 2000
100
P
out
, OUTPUT POWER (WATTS) PULSED
65
64
63
Figure 5. DC Safe Operating Area
P3dB = 61.23 dBm (1327.39 W)
P1dB = 60.57 dBm (1140.24 W)
Ideal
62
61
60
59
58
57
56
30
31
32
33
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
34
35
36
37
38
39
Actual
η
D
P
in
, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
32
I
DQ
= 6000 mA
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
28
3600 mA
1500 mA
750 mA
24
150 mA
20
V
DD
= 50 Vdc, f = 130 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
16
10
100
P
out
, OUTPUT POWER (WATTS) PULSED
1000
2000
12
0
375 mA
24
28
Figure 7. Pulsed Output Power versus
Input Power
20
V
DD
= 30 V
16
I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
200
400
600
800
1000
1200
1400
1600
35 V
40 V
45 V
50 V
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain versus
Output Power
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
5
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