CS22-08io1M
High Efficiency Thyristor
V
RRM
I
TAV
V
T
=
=
=
800 V
16 A
1.27 V
Single Thyristor
Part number
CS22-08io1M
Backside: isolated
2
3
1
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-220FP
●
Isolation Voltage: 2500 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Base plate: Plastic overmolded tab
●
Reduced weight
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS22-08io1M
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
900
V
800
10
2
1.30
1.59
1.27
1.65
16
25
0.86
13.2
0.5
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 150 °C
13
10
5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
=
t
P
= 200 µs; di
G
/dt = 0.3 A/µs;
I
G
=
0.3 A; V =
⅔
V
DRM
non-repet., I
T
=
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
10 µs
0.3 A; di
G
/dt =
0.3 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0.3 A/µs
150
µs
20 V/µs t
p
= 200 µs
30A; V =
⅔
V
DRM
T
VJ
=125 °C
60
2
mA
µs
90 A
30 A
50
300
325
255
275
450
440
325
315
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
W
W
W
V
R/D
= 800 V
V
R/D
= 800 V
I
T
=
I
T
=
I
T
=
I
T
=
30 A
60 A
30 A
60 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 90 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
2.5 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
500 V/µs
1.3
1.6
30
50
0.2
1
90
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 150°C
T
VJ
= 25 °C
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0.3 A; di
G
/dt =
V
R
= 100 V; I
T
=
turn-off time
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS22-08io1M
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-220FP
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
150
125
150
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
2
0.4
20
1.6
2.5
1.0
2.5
2500
2100
0.6
60
Product Marking
Part Number
Logo
DateCode
Lot#
Location
XXXXXX
yywwZ
123456
Ordering
Standard
Ordering Number
CS22-08io1M
Marking on Product
CS22-08io1M
Delivery Mode
Tube
Quantity
50
Code No.
500475
Similar Part
CS22-12io1M
CLA16E800PN
CMA30E1600PN
CLA30E1200PB
Package
TO-220ABFP (3)
TO-220ABFP (3)
TO-220ABFP (3)
TO-220AB (3)
Voltage class
1200
1200
1600
1200
CLA30E1200PC
CLA30E1200HB
CMA30E1600PB
CMA30E1600PZ
TO-263AB (D2Pak) (2)
TO-247AD (3)
TO-220AB (3)
TO-263AB (D2Pak) (2HV)
1200
1200
1600
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.86
10.1
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS22-08io1M
Outlines TO-220FP
E
Q
ØP
A
A1
H
D
Dim.
1
L1
2 3
A2
L
b1
e
b
c
A
A1
A2
b
c
D
E
e
H
L
L1
ØP
Q
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
0.45
0.60
15.67 16.07
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.018 0.024
0.617 0.633
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS22-08io1M
Thyristor
60
50
40
280
50 Hz, 80% V
RRM
1000
V
R
= 0 V
240
I
TSM
200
T
VJ
= 45°C
I
2
t
[A s]
2
I
T
30
[A]
160
T
VJ
= 125°C
T
VJ
= 45°C
T
VJ
= 125°C
[A]
20
10
T
VJ
= 25°C
0
0,5
1,0
1,5
2,0
T
VJ
= 150°C
125°C
120
100
80
0,001
0,01
0,1
1
1
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
10
2
C
30
25
t [ms]
Fig. 3 I
2
t versus time (1-10 s)
4
I
GD
: T
VJ
= 125°C
B
3
I
GT
: T
VJ
= -40°C
180° sine
10
1
T
VJ
= 125°C
20
B
B
I
GT
: T
VJ
= 25°C
I
GT
: T
VJ
= 0°C
V
G
2
t
gd
[µs]
10
0
lim.
typ.
I
T(AV)M
15
[V]
1
A
0
0
[A]
10
5
0
0
25
50
75 100 125 150 175
I
GD
: T
VJ
= 25°C
25
50
75
10
-1
10
-2
10
-1
10
0
10
1
I
G
[mA]
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
I
G
[A]
Fig. 5 Gate controlled delay time t
gd
T
case
[°C]
Fig. 6 Max. forward current at
case temperature
24
P
(AV)
[W]
dc =
1
20 0.5
0.4
0.33
16 0.17
0.08
12
8
4
0
0
5
10
15
20
0
50
100
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
3
Z
thJC
2
i R
thi
(K/W)
1
0.015
2
0.124
3
0.395
4
1.606
5
0.86
t
i
(s)
0.0011
0.0019
0.07
1.1
4.9
[K/W]
1
150
0
0,001
0,01
0,1
1
10
100
I
T(AV)
[A]
T
amb
[°C]
t
[s]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
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