,
(Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFF9230, IRFF9231, IRFF9232, IRFF9233
Avalanche-Energy-Rated
P-Channel Power MOSFETs
-3.5 A and -4.0 A, -150 V and -200 V
ros(on) = 0.8 fi and 1.2 O
Feature*:
•
Single pulse avalanche energy rated
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
•
Linear transfer characteristics
•
High input impedance
TERMINAL DIAGRAM
P-CHANNEL ENHANCEMENT MODE
The IRFF9230, IRFF9231, IRFF9232 and IRFF9233 are
advanced power MOSFETs designed, tested, and guaran-
teed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are p-
channel enhancement-mode silicon gate power field-effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay
drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
The IRFF-types are supplied in the JEDEC TO-205AF (Low-
Profile TO-39) metal package.
TERMINAL DESIGNATION
SOURCE
JEDEC TO-205AF
ABSOLUTE-MAXIMUM RATINGS
CHARACTERISTIC
Drain-Source Voltage 0
Drain-Gate Voltage (Ro. = 20 kO) 0
Continuous Drain Current
Pulsed Drain Current 0
Gate-Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Single-Pulse Avalanche Energy Rating 0
Operating Junction and Storage Temperature
Range
Lead Temperature
Vos
V
MB
ID @ Tc = 25° C
IDM
Vga
PD @ Tc = 25° C
£„
_ _
Tj, Twg
IRFF9230
-200
-200
-4.0
-16
IRFF9231
-150
-150
-4.0
-16
IRFF9232
-200
-200
-3.5
-14
IRFF9233
-150
-150
-3.5
-14
UNITS
V
V-
A
A
V
W
±20
25 (See Fig. 14)
0.2 (See Fig. 14)
500
-55 to +150
300 (0,063 in. (1.6mm) from case lor 10s)
W/"C
mj
•c
«c
Quality Semi-Conductors
,
IJ
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
ELECTRICAL CHARACTERISTICS, At T
c
= 25° C (Unto* OthwwlM Specified)
CHAHACTCRIWC
Drain-Source Breakdown Voltage
BVpw
TYPK
IRFF9230
IRFF9232
IRFF8231
IRFF9233
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero-Gate Voltage Drain Current
On-State Drain Current 0
Vo.lth)
lam
low
IMS
lo(on)
ALL
ALL
ALL
MM.
-ZOO
-150
-2.0
-
-
-
—
-4.0
TYP. MAX.
-
-
-
-
-
-
—
-
-
0.5
0.8
3.5
550
UNITS
V
V
V
nA
DA
HA
M
A
A
TUT CONDITION*
-
-
-4.0
V
0
. = 0 V
I
0
=
-250
//A
V
M
-V
M
, lo--250/iA
-100
100
-250
-1000
-
-
0.8
1.2
—
-
_.
-
50
100
100
80
45
26
IB
V
a
. - -20 V
rv,,, = 2ov
V
M
= Max. Rating, Vo. • 0 V
V
D
« = Max. Rating x 0.8. Va. • 0 V. Tc - 125°C
ALL
IRFF9230
IRFF9231
IRFF9232
IRFF9233
-3.5
-
-
22
Static Drain-Source On-State
Resistance ©
r
M
(on)
IRFF9230
IRFF9231
IRFF9232
IRFF9233
n
VOB ~ 10V ID"
20A
n
S(U)
PF
PF
Forward Tranaconductance (a)
Input Capacitance
Output Capacitance
Reverse
Transfer Capacitance
Turn-On Delay Time
Hue Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain (("Miller") Charge
Internal Drain Inductance
g»
CM
C...
C*,
Won)
I,
t«(off)
t<
Q
0
Q,.
Q*
LD
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Vo,
>
lo(on) x ros(on) max., ID
-
2.0 A
V« = 0 V Voa
=
-25 V f = 1 0 MHz
-
-
-
-
—
170
50
30
I 50
50
40
31
18
13
5.0
pF
ns
na
ns
na
nC
nC
nC
nH
VOD - O.S BVoaa, ID = 2.0 A.
Za
= 50 0
S««Flg. 17
(MOSFET switching times are essentially
independent of operating temperature.)
Vo» • -15 V, ID = -8.0 A, Vo> = 0.8 Max. Rating.
3«e Fig. 18 for teat circuit. (Gats charge is essentially
Independent of operating temperature.)
Measured from the drain
lead, 5mm (0.2 in.)
from header to center
of die.
Measuredlrom the
from header to source
bonding pad.
Modified MOSFET
symbol showing The
internal device
inductances.
°
/ 1 [~7t \e lead, 5mm (0.2 in.)
~^
s
-
-
-
-
i_Z_
Internal Source Inductance
U
ALL
"TS.O
^ik
Junctlon-to-Case
Junction- to- Ambient
R«ie
Ftju
ALL
ALL
-
-
5,0
"C/W
>75
•c/w
—
—
SOURCE-DRAIN DIODE RATINQS AMD CHARACTERISTICS
Typical socket mount.
Continuous Source Current
(Body Diode)
1,
IRFF9230
IRFF9231
IRFF9232
IRFF9233
-
-
-
-
-
-
—
-
-
-
-
-
_
400
-4.0
-3.5
-16
-14
A
A
A
A
V
V
ns
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier,
Pulse Source Current
(Body Diode) ®
)
>M
IRFF9230
IRFF9231
IRFF9232
IRFF9233
s
Diode Forward Voltage®
V»
IRFF9230
IRFF9231
IRFF9232
IRFF9233
-1.5
T
C
= 25°C, I.--4.0A, Vo. = OV
To = 25° C, Is • -3.5 A, Voi
-
0 V
-1.5
—
Reverse Recovery Time
Revert* Recovered Charge
Forward Turn-on Time
t.
QM
U
ALL
ALL
ALL
Tj * 1SO*C, Ir = -4.0 A, d!p/dt = 100 A/ps
—
—
2.6
Tj = 150*C, Ir - -4.0 A, dWdt « 100 A/*S
&
Intrinsic turn-on time Is negligible. Turn-on spaed Is substantially controlled by Lt + LD.
0 Repetitive Ruing; Pulse width limited
®Tj-25'CtolSO-C
by max junction temperature
<5 Pulse Teat: Pulse width
<
300 pi.
See Transient Thermal Impedance Curve (Fig. 5).
Duty Cycle £ 2%
© Vno = 50 V, Starting Tj = 25* C. L - 46.9 mH.
R« • 25 a Peek IL = 4.0 A (See Figs. 15 A 16).
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