PD - 9.1221
IRF1310S
HEXFET
®
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
V
DSS
= 100V
R
DS(on)
= 0.04
Ω
I
D
= 41A
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
41
29
160
170
3.8
1.1
0.025
±20
230
41
17
5.5
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
––––
––––
Max.
0.90
40
62
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 0
IRF1310S
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
77
82
64
4.5
7.5
––– 2500
––– 630
––– 130
Max. Units
Conditions
–––
V
V
GS
= 0V, ID = 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.04
Ω
V
GS
= 10V, I
D
= 25A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 25A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
110
I
D
= 25A
18
nC V
DS
= 80V
42
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 25A
ns
–––
R
G
= 9.1Ω
–––
R
D
= 2.0Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
140
0.79
41
A
160
2.5
210
1.2
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
25A, di/dt
≤
170A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 25V, starting T
J
= 25°C, L = 3.1mH
R
G
= 25Ω, I
AS
= 25A. (See Figure 12)
IRF1310S
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100 0
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
10 0
10
10
4.5V
4.5V
1
0.1
1
20µs PULSE WIDTH
T
C
= 25°C
10
100
1
0.1
1
20µs PULSE WIDTH
T
C
= 175°C
10
100
V
, Drain-to-Source Voltage (V)
DS
V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
Fig 2.
Typical Output Characteristics,
T
C
= 175
o
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
3.0
I
D
= 25A
I
D
, D ra in-to-So urce Current (A )
2.5
T
J
= 2 5°C
100
2.0
T
J
= 1 7 5°C
1.5
10
1.0
0.5
1
4
5
6
7
V
DS
= 50V
2 0µ s P U L S E W ID TH
8
9
10
0.0
-6 0 -4 0 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
V
G S
, G a te-to-S o urce V olta ge (V )
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF1310S
4 00 0
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 25A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
3 00 0
C
iss
12
2 00 0
C
oss
1 00 0
8
GS
4
C
rss
0
1
10
10 0
0
0
30
60
V
FOR TEST CIRCUIT
SEE FIGURE 13
90
12 0
V DS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
10µs
100
100
T
J
= 175°C
T
J
= 25°C
10
100µs
10
1ms
10ms
1
0
0.5
1
1.5
V
GS
= 0V
2
2.5
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100ms
100
1000
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF1310S
V
DS
50
R
D
V
GS
R
G
D.U.T.
V
DD
I
D
, Drain Current (Amps)
40
10 V
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0 .5 0
T herm al Re spo nse (Z
thJC
)
0 .2 0
0.1
0 .1 0
P
D M
0 .0 5
t
0 .0 2
0 .0 1
S ING L E PU L S E
(T H E R M A L R E S P O N S E )
N o te s :
1 . D u ty fa c to r D = t / t
1 2
1
t
2
0.01
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0.0001
0 .001
0.01
0.1
1
10
t
1
, R ectang ular Pulse D uration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
