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W005M

产品描述1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小45KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
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W005M概述

1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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W005M THRU W10M
Features
· Glass Passivated Die Construction
· Diffused Junction
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 50A Peak
· Ideal for Printed Circuit Boards
· Case to Terminal Isolation Voltage 1500V
· Plastic Material - UL Flammability
Classification Rating 94V-0
CURRENT 1.5 Amperes
VOLTAGE 50 to 1000 Volts
A
B
+
-
C
D
WOB
Mechanical Data
· Case : WOB, Molded Plastic
· Terminals : Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity : As Marked on Body
· Weight : 1.3 grams (approx.)
· Mounting Position : Any
· Marking : Type Number
E
Dim
A
B
C
D
E
G
Min
8.84
4.00
27.90
25.40
0.71
4.60
Max
9.86
4.60
-
+
G
G
0.81
5.60
A ll Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
=25
V
RMM
V
RWM
V
R
V
RMS
Io
I
FSM
V
FM
I
RM
C
j
JA
T
j
T
STG
W005M W01M W02M W04M W06M W08M W10M
50
35
100
70
200
140
400
280
1.5
50
1.0
5.0
500
12
84
-65 to +150
600
420
800
560
1000
700
Units
Volts
Volts
Amps
Amps
Volts
μA
pF
℃/W
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
Forward Voltage (per element)
Peak Reverse Current at Rated
DC Blocking Voltage
@ I
F
=1.5 A
@ T
A
=25℃
@ T
A
=125℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance,
Junction to Case (Note 2)
Operating and Storage Temperature Range
Notes:
(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(2) Thermal Resistance from junction to case mounted on PC board with 13 x 13mm (0.03mm thick) land areas.

W005M相似产品对比

W005M W02M W01M W04M W10M W06M
描述 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE GENESIC SEMICONDUCTOR - W04M - BRIDGE RECTIFIER; 1PH; 1.5A; 400V; DOB BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-1W 1.5 A, SILICON, BRIDGE RECTIFIER DIODE

 
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