SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
DO-214AA (SMB J-Bend)
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
V
WM
P
PPM
I
FSM
(Unidirectional only)
T
j
max.
5.0 V to 188 V
600 W
100 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1,2)
(see Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
Minimum 600
see next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number 88392
08-Sep-06
www.vishay.com
1
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
DEVICE MARKING
CODE
UNI
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PS
BI
CS
CT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PS
BREAKDOWN
VOLTAGE
V
(BR)
AT I
T (1)
(V)
MIN
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
1.7
2.0
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
SMBJ43
(+)
SMBJ43A
(+)
SMBJ45
(+)
SMBJ45A
(+)
SMBJ48
(+)
SMBJ48A
(+)
SMBJ51
(+)
SMBJ51A
(+)
SMBJ54
(+)
SMBJ54A
(+)
(+)
SMBJ58
SMBJ58A
(+)
SMBJ60
(+)
SMBJ60A
(+)
SMBJ64
(+)
SMBJ64A
(+)
SMBJ70
(+)
SMBJ70A
(+)
SMBJ75
(+)
SMBJ75A
(+)
SMBJ78
(+)
SMBJ78A
(+)
SMBJ85
(+)
SMBJ85A
(+)
SMBJ90
(+)
SMBJ90A
(+)
SMBJ100
(+)
SMBJ100A
(+)
SMBJ110
(+)
SMBJ110A
(+)
SMBJ120
(+)
SMBJ120A
(+)
SMBJ130
(+)
SMBJ130A
(+)
SMBJ150
(+)
SMBJ150A
(+)
SMBJ160
(+)
SMBJ160A
(+)
SMBJ170
(+)
SMBJ170A
SMBJ188
SMBJ188A
Note:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum V
(BR)
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 50 A (uni-directional only)
(+)
Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number 88392
08-Sep-06
www.vishay.com
3
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
Note:
(1) Mounted on minimum recommended pad layout
SYMBOL
R
θJA
R
θJL
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
SMBJ5.0A-E3/52
SMBJ5.0A-E3/5B
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
T
j
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
I
PPM
- Peak Pulse Current,
%
I
RSM
tr = 10
µsec
Peak
Value
I
PPM
P
PPM
, Peak Pulse Power (kW)
10
100
Half
Value
- I
PP
2
I
PPM
50
10/1000
µsec Waveform
as defined
by
R.E.A.
1
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
0.1
0.1
µs
td
0
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
0
1.0
2.0
3.0
4.0
td - Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
6000
75
C
J
, Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
V
R
, Measured at Stand-off
Voltage V
WM
Uni-Directional
Bi-Directional
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
25
0
0
25
50
75
100
125
150
175
200
10
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-off
Voltage
(V)
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 4. Typical Junction Capacitance
www.vishay.com
4
Document Number 88392
08-Sep-06
Microchip MCU
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