Schottky Barrier Diodes for
Stripline, Microstrip Mixers and
Detectors
Technical Data
5082-2207/09
5082-2765/85
5082-2774/94
Features
•
Small Size
• Low Noise Figure
6 dB Typical at 9 GHz
• Rugged Design
• High Uniformity
• High Burnout Rating
1 W RF Pulse Power Incident
• Both Medium and Low
Barrier Available
Outline C2
C
P
= 0.055 pF
ANGLE CUT 30-50°
ALTERNATE 0.13 (.005)
DIA. HOLE 1.5 (0.06)
FROM END
CATHODE
Package Characteristics
These diodes are designed for
microstrip and stripline use. The
kovar leads provide good
continuity of transmission line
impedance to the diode. Outline
C2 is a plastic on ceramic
package. Outline H2 has a metal
ceramic hermetic seal. The
ceramic is alumina. Metal parts
are gold plated kovar.
0.10
(0.004)
TYP.
0.46 (0.018)
0.30 (0.012)
1.40 (0.055)
1.14 (0.045)
SQUARE
3.81 (0.150)
MIN.
Description/Applications
This family consists of medium
barrier and low barrier beam lead
diodes mounted in easily handled
carrier packages. Low barrier
diodes provide optimum noise
figure at low local oscillator drive
levels. Medium barrier diodes
provide a wider dynamic range for
lower distortion mixer designs.
Application Note 976 presents
design techniques for an X-Band
mixer.
Note:
For new designs, the HSMS-286X and
HSMS-820X series of surface mount
microwave diodes are recommended.
0.36 (0.014)
MAX.
1.27 (0.050)
MAX.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Outline H2
C
P
= 0.175 pF
The hermetic package, outline H2,
is capable of passing many of the
environmental tests of MIL-STD-
750. The applicable solderability
test is reference 2031.1: 260°C,
10 seconds.
2.59 (0.102)
2.06 (0.081)
LID DIA.
CATHODE
0.58 (0.023)
0.43 (0.017)
2.64 (0.104)
2.34 (0.092)
3.30 (0.130)
SQUARE
MIN.
0.20 (0.008)
0.10 (0.004)
0.89 (0.035)
0.64 (0.025) 0.18 (0.007)
KOVAR LEADS,
Au PLATED
0.08 (0.003)
DIMENSIONS IN MILLIMETERS AND (INCHES).
2
Maximum Ratings
Operating and Storage Temperature Range
C2 Packaged Diodes ........................................................-65°C to +150
°C
H2 Packaged Diodes .......................................................-65°C to +175
°C
Pulse Power Incident at T
CASE
= 25°C ..................................................... 1 W
(1
µs
pulse, Du = 0.001)
CW Power Dissipation at T
CASE
= 25°C
(Measured in an infinite heat sink) ............................................... 125 mW
Derate linearly to zero at maximum operating temperature.
Diode Mounting Temperature in Packages
C2 ............................................................................. 235°C for 10 sec max.
H2 ............................................................................. 260°C for 10 sec max.
Peak Inverse Voltage .................................................................................. 4 V
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
RF Electrical Specifications at T
A
= 25°C
Part
Number
5082-
2765
2785
2207
2209
2774
2794
Test
Conditions
*Minimum batch size 20 units.
Test
Freq.
(GHz)
9.375
Maximum
Noise
Figure
NF (dB)
6.0
6.5
6.0
6.5
6.0
6.5
IF
Impedance
Z
IF
(Ω)
Min.
Max.
150
200
150
350
400
350
Maximum
SWR
1.5:1
2.0:1
1.5:1
2.0:1
1.5:1
2.0:1
V=0
Typical
Junction
Capacitance
C
j
(pF)
0.18
Barrier
Low
Low
Medium
Medium
Low
Low
Package
Hermetic H2
Broadband C2
DC Load Resistance = 0
Ω
L.O. Power = 1 mW
IF = 30 MHz, 1.5 dB NF
Typical Detector Characteristics at T
A
= 25°C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Low Barrier (Zero Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol
T
SS
γ
R
V
Typical Value
-44
10
1.8
Units
dBm
mV/µW
ΜΩ
Test Conditions
Zero Bias, R
L
= 10 MΩ
P
in
= - 30 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
Symbol
T
SS
γ
R
V
Typical Value
-54
6.6
1400
Units
dBm
mV/µW
Ω
Test Conditions
20
µA
Bias, R
L
= 100 KΩ
P
in
= - 40 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
3
SPICE Parameters
5082-2207
5082-2209
5
0.20
0.69
10E - 5
3 x 10E - 10
1.08
Ω
V
5
0.65
2
0.5
5082-2765
5082-2774
5082-2785
5082-2794
5
0.20
0.69
10E - 5
4 x 10E - 8
1.08
6
0.5
2
0.5
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
Units
V
pF
eV
A
A
Typical Parameters
100
100
FORWARD CURRENT (mA)
10
FORWARD CURRENT (mA)
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
10
1
1
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
0.01
0
0.2
0.4
0.6
0.8
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
Figure 1. Typical Forward
Characteristics for Medium Barrier
Diodes.
Figure 2. Typical Forward
Characteristics for Low Barrier
Diodes.
1.0
1.0
2.0
0
0.2
3
2
1.5 mA
3 mA
1 mA
8
7
3.
5.
0
0.2
2
20
50
150
µA
0.2
0.5
1.0
2.0
3.0
3.
5.
0
0
9
2.0
3.0
5.0
.0
10
8
5.0
0
.
10
4
5
6
7
3
6
0.2
0.5
1.0
10.0
.0
2.0
4
5
9
10
0.2
10
11
12 GHz
5
3.
0
12 GHz
5
2.0
1.0
Figure 3. Typical Admittance Characteristics, 5082-2765
with Self Bias.
Figure 4. Typical Admittance Characteristics, 5082-2765
with External Bias.
1.0
2.0
0.
0.
3.
0
11
5.
0
0.2
10
1
0
10.0
0.
5.
0
0.
5
0.
5
4
Typical Parameters,
continued
1.0
1.0
0.
2.0
4
3
0.2
5
6
0
4
6
7
2.0
3.
0
7
8
3.
0.
5
5
5
3
0
5.
10
.0
2
1
1.5
0.2
0.2
2.0
3 mA
0.5
1.0
0.2
0.5
10.0
.0
10
3.0
5.0
1.0
2.0
9
2
20 50
0
5.
8
150
µA
3.0
5.0
.0
10
9
0.2
10
0.2
11
0.
5
12 GHz
2.0
0.
5
1.0
Figure 5. Typical Admittance Characteristics 5082-2785
with Self Bias.
1.0
Figure 6. Typical Admittance Characteristics 5082-2785
with External Bias.
1.0
1.0
2.0
6
8
4
0.2
3.
3
9
10
0.5
1.0
2.0
3.0
0
5.
10
.0
0.2
3.
5
8
4
2
20 50
0.2
0
0
6
7
2.0
2.0
12 GHz
0.5
1.0
2.0
10
0.
5
5
2.0
Figure 7. Typical Admittance Characteristics, 5082-2207
and 5082-2774 with Self Bias.
1.0
1.0
Figure 8. Typical Admittance Characteristics, 5082-2207
and 5082-2774 with External Bias.
1.0
1.0
2.0
3.
0
5
0.2
8
9
10
4
3
0.2
0.5
1.0
2.0
5.
0
0.2
3.
.0
10
6
7
2.0
2.0
0.
0
10.0
.0
3 mA
0.
5
5
2.0
Figure 9. Typical Admittance Characteristics, 5082-2209
and 5082-2794 with Self Bias.
1.0
Figure 10. Typical Admittance Characteristics, 5082-2209
and 5082-2794 with External Bias.
1.0
2.0
0.
5.
0
3.
0
5.
0
0.2
12
GHz
3.
0
10
0.2
11
12
10
.0
11
150
µA
10
10.0
3.0
3.0
5.0
5.0
2
1
1.5
20 50
0.2
3
2 GHz
0.5
4 5
6 7
8
1.0
2.0
5.
9
5.
0
3.
0
5.
0
0.2
12 GHz
0
12 GHz
0.2
10
.0
11
10.0
.0
10.0
0.2
3.0
5.0
5.0
2
1 1.5
3 mA
150
µA
10
3.
0
11
3.
5.
.0
10
5.
0
10
0
10
10
0.
5
10.0
.0
5.
0
3.
0
0.
5
0.
5
0.
5
0
.0
5
Typical Parameters,
continued
50
Ω
PPO STRIPLINE
1/8 INCH GROUNDPLANE SPACING
7.5
DEVICE UNDER TEST
CATHODE GROUNDED
"A"
PPO
AIR
NOISE FIGURE (dB)
7.0
GROUND
10.0
(0.40)
6.5
6.0
4.1
(0.16)
PACKAGE
C2
5.5
1
3
5
7
9
11
13
15
H2
FREQUENCY (GHz)
DIMENSION
"A"
1.91
±
0.05
(0.075
±
0.002)
2.67
±
0.05
(0.105
±
0.002)
Figure 11. Typical Noise Figure vs.
Frequency for 5082-2209, -2794.
Figure 12. Admittance Test Circuit.
MODEL FOR H2 DIODES
14.5 nH
46.9
Ω
0.320 (0.0126)
ε
EFF.
= 6.37
0.435 nH
C
J
R
J
47.6
Ω
0.775 (0.0305)
ε
EFF.
= 6.37
0.085 pF
DIMENSIONS IN MILLIMETERS (INCHES)
1 mA Rect. Current
Parameter
Junction Resistance
Junction Capacitance
Symbol
R
J
C
J
5082-2765
258
0.255
20
µA
Ext. Bias
5082-2765
545
0.302
Units
Ω
pF
MODEL FOR C2 DIODES
14.5 nH
67.0
Ω
0.318 (0.0125)
ε
EFF.
= 6.37
0.53 nH
C
J
R
J
67.0
Ω
0.318 (0.0125)
ε
EFF.
= 6.37
0.065 pF
DIMENSIONS IN MILLIMETERS (INCHES)
1 mA Rect. Current
Parameter
Junction Resistance
Junction Capacitance
Symbol
R
J
C
J
5082-2207, 5082-2774
338
0.189
20
µA
Ext. Bias
5082-2207, 5082-2774
421
0.195
Units
Ω
pF
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