Ordering number : ENA1653
SBT250-04JS
SANYO Semiconductors
DATA SHEET
SBT250-04JS
Applications
•
Schottky Barrier Diode (Twin Type
•
Cathode Common)
40V, 25A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
•
•
Guaranteed up to Tj=150°C.
Low forward voltage (VF max=0.55V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz resistive load, sine wave Tc=86°C
50Hz sine wave, 1 cycle
Conditions
Ratings
40
44
25
100
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VR
VF
IR
Conditions
IR=3mA, Tj=25°C *
IF=10A, Tj=25°C *
VR=20V, Tj=25°C *
Ratings
min
40
0.55
0.3
typ
max
Unit
V
V
mA
Note)
*
: Value per element
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
21710SD TK IM TC-00002264 No. A1653-1/3
SBT250-04JS
Continued from preceding page.
Parameter
Interterminal Capacitance
Thermal Resistance
C
Rth(j-c)
Symbol
Conditions
VR=10V, Tj=25°C *
Junction-Case : Smoothed DC
Ratings
min
typ
510
3.5
max
Unit
pF
°C / W
Note)
*
: Value per element
Package Dimensions
unit : mm (typ)
7525-001
10.0
3.5
4.5
2.8
Electrical Connection
1
3
3.2
1 : Anode
2 : Cathode
3 : Anode
2
16.0
3.6
7.2
Top view
1.6
1.2
14.0
0.75
1 2 3
0.7
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220ML(LS)
2.55
2.55
2.4
100
7
5
3
2
IF -- VF
Represented by max
50
°
C
Tj=1
25
°
C
Reverse Current, IR -- mA
5
3
2
100
7
5
3
2
10
7
5
3
2
IR -- VR
Forward Current, IF -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.4
0.8
1.2
1.6
IT09142
max
0
°
C
15
Tj=
p
C ty
50
°
1
p
C ty
25
°
1
p
C ty
00
°
1
1.0
0
10
20
30
40
50
IT09143
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
20
18
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
9
8
7
6
5
4
3
2
180°
1
0
0
360°
10
20
30
40
PR(AV) -- VRM
(3)
(4)
16
14
12
10
8
6
4
2
0
0
Sine
wave
(1)
180°
360°
(2)
(1)Rectangular wave
θ
=300
°
(2)Rectangular wave
θ
=240
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
VR
θ
360°
PR max at Tj=150
°
C
(1)
(2)
(3)
Rectangular
wave
θ
360°
Sine
wave
VR
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
10
15
20
25
30
IT09144
(4)
5
50
IT09145
Average Output Current, IO -- A
Peak Reverse Voltage, VRM -- V
No. A1653-2/3
SBT250-04JS
160
Tc -- IO
Interterminal Capacitance, C -- pF
3
2
C -- VR
f=100kHz
Case Temperature, Tc --
°C
140
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Sine
wave
180°
360°
1000
7
5
120
100
Rectangular
wave
80
θ
360°
60
0
5
10
15
3
2
(1)
20
(2)
(4) (3)
25
30
IT09146
100
7
1.0
2
3
5
7
10
2
3
5
7
Average Output Current, IO -- A
140
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
120
Transient Thermal Resistance, Rth(j-c) --
°C
/ W
IFSM -- t
I
S
Reverse Voltage, VR -- V
7
5
Rth(j-c) -- t
ID01080
100
80
20ms
t
3
2
60
40
1.0
7
5
20
0
3
2
0.001 2 3
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5 70.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Time, t -- s
ID01081
Time, t -- s
5 7 10
IT09147
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of February, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1653-3/3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
