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70P257L55BYI: 产品描述Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100; 产品类别存储存储; 文件大小296KB，共23页; 制造商IDT (Integrated Device Technology)

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70P257L55BYI概述

Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100

70P257L55BYI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	BGA
包装说明	BGA, BGA100,10X10,20
针数	100
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	55 ns
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B100
JESD-609代码	e0
内存密度	131072 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	100
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	8KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装等效代码	BGA100,10X10,20
封装形状	SQUARE
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	1.8 V
认证状态	Not Qualified
最大待机电流	0.000008 A
最小待机电流	1.7 V
最大压摆率	0.025 mA
最大供电电压 (Vsup)	1.9 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	0.5 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
Base Number Matches	1

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VERY LOW POWER 1.8V

8K/4K x 16 DUAL-PORT

STATIC RAM

Features

◆

PRELIMINARY

IDT70P257/247L

◆

True Dual-Ported memory cells which allow simultaneous

reads of the same memory location

High-speed access

– Industrial: 55ns (max.)

Low-power operation

IDT70P257/247L

Active: 27mW (typ.)

Standby: 3.6

W (typ.)

Separate upper-byte and lower-byte control for multiplexed

bus compatibility

IDT70P257/247 easily expands data bus width to 32 bits or

more using the Master/Slave select when cascading more

than one device

◆

M/S = V

for

BUSY

output flag on Master

M/S = V

for

BUSY

input on Slave

Input Read Register

Output Drive Register

BUSY

and Interrupt Flag

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

LVTTL-compatible, single 1.8V (±100mV) power supply

Available in 100 Ball 0.5mm-pitch BGA

Industrial temperature range (-40°C to +85°C)

Functional Block Diagram

R/W

I/O

-I/O

15L

I/O

-I/O

BUSY

(2,3)

I/O

-I/O

15R

I/O

Control

I/O

Control

I/O

-I/O

BUSY

(2,3)

12L

(1)

Address

Decoder

MEMORY

ARRAY

Address

Decoder

12R

(1)

R/W

IRR

,IRR

INPUT

READ REGISTER

AND

OUTPUT

DRIVE REGISTER

SFEN

R/W

ODR

R/W

SEM

(3)

INT

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

SEM

INT

(3)

5684 drw 01

M/S

NOTES:

1. A

12X

is a NC for IDT70P247.

2. (MASTER):

BUSY

is output; (SLAVE):

BUSY

is input.

BUSY

outputs and

INT

outputs are non-tri-stated push-pull.

FEBRUARY 2004

DSC-5684/1

70P257L55BYI相似产品对比

	70P257L55BYI	70P247L55BYI8	IDT70P257L55BYI8	70P247L55BYI	70P257L55BYI8	IDT70P247L55BYI8
描述	Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100	Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100	Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100	Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100	Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100	Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	BGA, BGA100,10X10,20	BGA, BGA100,10X10,20	BGA, BGA100,10X10,20	BGA, BGA100,10X10,20	BGA, BGA100,10X10,20	BGA, BGA100,10X10,20
针数	100	100	100	100	100	100
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B100	S-PBGA-B100	S-PBGA-B100	S-PBGA-B100	S-PBGA-B100	S-PBGA-B100
JESD-609代码	e0	e0	e0	e0	e0	e0
内存密度	131072 bit	65536 bit	131072 bit	65536 bit	131072 bit	65536 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	16	16	16	16	16	16
湿度敏感等级	3	3	3	3	3	3
功能数量	1	1	1	1	1	1
端口数量	2	2	2	2	2	2
端子数量	100	100	100	100	100	100
字数	8192 words	4096 words	8192 words	4096 words	8192 words	4096 words
字数代码	8000	4000	8000	4000	8000	4000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	8KX16	4KX16	8KX16	4KX16	8KX16	4KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	BGA	BGA	BGA	BGA	BGA
封装等效代码	BGA100,10X10,20	BGA100,10X10,20	BGA100,10X10,20	BGA100,10X10,20	BGA100,10X10,20	BGA100,10X10,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225
电源	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.000008 A	0.000008 A	0.000008 A	0.000008 A	0.000008 A	0.000008 A
最小待机电流	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
最大压摆率	0.025 mA	0.025 mA	0.025 mA	0.025 mA	0.025 mA	0.025 mA
最大供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	20	20	20
Base Number Matches	1	1	1	1	1	1
厂商名称	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

70P257L55BYI

70P257L55BYI概述

70P257L55BYI规格参数

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70P257L55BYI相似产品对比

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