TPV593
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI TPV593
is a Common
Emitter Device Designed for Class A
High Linearity Television Band IV and
V Transmitter Applications.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
•
Gold Metalization
•
Emitter Ballasting
•
High Gain
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
1.2 A
45 V
17.5 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
10 C/W
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
h
FE
C
ob
I
C
= 40 mA
I
C
= 10 mA
I
E
= 10 mA
V
CE
= 5.0 V
V
CB
= 28 V
Po = 2.0 W
P
G
T
C
= 25
O
C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
26
45
4.0
UNITS
V
V
V
---
I
C
= 250 mA
f = 1.0 MHz
SOUND CARRIER
= -10 dB
CHROMA
= 16 dB
10
8.0
pF
VISION CARRIER
= -8.0 dB
10
12
dB
V
CE
= 25 V
Po = 2.0 W
IMD
3
I
C
= 410 mA
f = 860 MHz
-60
dBc
VISION CARRIER
= -8.0 dB
SOUND CARRIER
= -10 dB
CHROMA
= 16 dB
V
CE
= 25 V
I
C
= 410 mA
f = 860 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
PCB设计
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