48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
| 参数名称 | 属性值 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 200 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 48 A |
| 最大漏源导通电阻 | 0.025 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 400 pF |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 100 W |
| 最大脉冲漏极电流 (IDM) | 144 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间（toff） | 400 ns |
| 最大开启时间（吨） | 530 ns |
| Base Number Matches | 1 |
| NDB6060L/L99Z | NDP6060L/J69Z | NDB6060L | NDB6060L/L86Z | NDP6060L | NDB6060L/S62Z | |
|---|---|---|---|---|---|---|
| 描述 | 48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 200 mJ | 200 mJ | 200 mJ | 200 mJ | 200 mJ | 200 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 48 A | 48 A | 48 A | 48 A | 48 A | 48 A |
| 最大漏源导通电阻 | 0.025 Ω | 0.025 Ω | 0.025 Ω | 0.025 Ω | 0.025 Ω | 0.025 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 400 pF | 400 pF | 400 pF | 400 pF | 400 pF | 400 pF |
| JEDEC-95代码 | TO-263AB | TO-220AB | TO-263AB | TO-263AB | TO-220AB | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | 2 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 100 W | 100 W | 100 W | 100 W | 100 W | 100 W |
| 最大脉冲漏极电流 (IDM) | 144 A | 144 A | 144 A | 144 A | 144 A | 144 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | YES | YES | NO | YES |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 400 ns | 400 ns | 400 ns | 400 ns | 400 ns | 400 ns |
| 最大开启时间（吨） | 530 ns | 530 ns | 530 ns | 530 ns | 530 ns | 530 ns |
| 外壳连接 | DRAIN | - | DRAIN | DRAIN | - | DRAIN |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
电子竞赛
FPGA/CPLD
聊聊、笑笑、闹闹
FPGA/CPLD
嵌入式系统
Linux开发
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
