MMBZ5223BW-
MMBZ5259BW
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.7 to 39 Volts POWER RATING 200 mWatts
FEATURES
*
*
*
*
Planar Die Construction
200mW Power Dissipation on FR-4 PCB
General purpose,Medium Current
Ldeally Suited for Automated Assembly
SOT-323
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.006 gram
0.053(1.35)
0.045(1.15)
0.006(0.15)
0.003(0.08)
REF 0.021(0.53)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.096(2.45)
0.085(2.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.055(1.40)
0.047(1.20)
0.087(2.20)
0.079(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES (@ T
A
= 25 C unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation @T
A
=25
o
C (Note 1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
D
T
J
T
STG
VALUE
200
-65 to +150
-65 to +150
UNITS
mW
o
o
o
C
C
ELECTRICAL CHARACTERISTICS ( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (Note 1)
Max. Instantaneous Forward Voltage at I
F=
10mA
SYMBOL
Rq
JA
V
F
MIN.
-
-
TYP.
-
-
MAX.
625
0.9
UNITS
o
C/W
Volts
2008-12
REV: A
Note 1. Valid provided that device terminals are kept at amblent temperaturt.
ELECTRICAL CHARACTERISTICS
Zener voltage Range (Note 1)
TYPE
V
Z
(V) @ I
ZT
Nom
Volts
MMBZ5223BW
MMBZ5225BW
MMBZ5226BW
MMBZ5227BW
MMBZ5228BW
MMBZ5229BW
MMBZ5230BW
MMBZ5231BW
MMBZ5232BW
MMBZ5234BW
MMBZ5235BW
MMBZ5236BW
MMBZ5237BW
MMBZ5239BW
MMBZ5240BW
MMBZ5241BW
MMBZ5242BW
MMBZ5243BW
MMBZ5245BW
MMBZ5246BW
MMBZ5248BW
MMBZ5250BW
MMBZ5251BW
MMBZ5252BW
MMBZ5254BW
MMBZ5255BW
MMBZ5256BW
MMBZ5257BW
MMBZ5258BW
MMBZ5259BW
(@TA=25 C unless otherwise specified)
O
Test
current
Maximum Zener impedance
Z
ZT
at I
ZT
(W)
30
30
28
24
23
22
19
17
11
7
5
6
8
10
17
22
30
13
16
17
21
25
29
33
41
44
49
58
70
80
at
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Maximum
reverse leakage current
I
R
(uA)
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
5.0
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11
12
14
15
17
18
21
21
23
25
27
30
Min
Volts
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
Max
Volts
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
29.40
31.50
34.65
37.80
40.95
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.0
6.2
5.6
5.2
5.0
4.5
4.2
3.8
3.4
3.2
Z
ZK
(W)
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
30
33
36
39
Note 1. Tested with pulses,Tp<1.0ms.
RATING AND CHARACTERISTICS CURVES ( MMBZ5223BW-MMBZ5259BW )
0.4
CT,TOTAL CAPACITANCE(pF)
PD,POWER DISSIPATION(W)
1000
TJ = 25
O
C
f = 1MHz
0.3
0.2
100
V
R
=1V
V
R
=2V
10
0.1
0
0
25
50
75
100
O
125
150
1
10
VZ,NOMINAL ZENER VOLTAGE(V)
100
Figure 1 Power Dissipation vs Ambient Temperature
1000
DYNAMIC ZENER IMPEDANCE(W)
P
PK
,PEAK SURGE POWER (W)
100
TA,AMBIENT TEMPERATURE( C)
Figure 2 Total Capacitance vs Nominal Zener Voltage
100
I
Z
= 1.0mA
100
10
10
1
1
10
VZ,NOMINAL ZENER VOLTAGE(V)
1
1
10
100
1000
PULSE WIDTH(ms)
Figure 3 Zener Voltage vs Zener Impedence
50
40
30
20
10
0
Test Current Iz
20mA
TJ = 25
O
C
5V6
6V8
8V2
IZ,ZENER CURRENT(mA)
20
30
Figure 4 Maximum Non-repetitive Surge Power
TJ = 25
O
C
10
12
15
Nominal Zener Voltage
18
22
27
IZ,ZENER CURRENT(mA)
Test Current Iz
10
33
36 39
0
1
2
3
4
5
6
7
8
9
10
0
0
10
20
VZ,ZENER VOLTAGE(V)
30
40
VZ,ZENER VOLTAGE(V)
Figure 5 Zener Breakdown Characteristics
Figure 6 Zener Breakdown Characteristics
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
RECTRON
NXP MCU
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