HMC409LP4
/
409LP4E
v03.0710
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Features
Gain: 31 dB
40% pAe @ +32.5 dBm pout
2% eVm @ pout = +22 dBm
with 54mbps ofDm signal
+46 dBm output ip3
integrated power Control (Vpd)
single +5V supply
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.8 GHz applications:
• wimAX 802.16
• fixed wireless Access
9
Amplifiers - lineAr & power - smT
• wireless local loop
Functional Diagram
General Description
The HmC409lp4 & HmC409lp4e are high efficiency
GaAs inGap HBT mmiC power amplifiers operating
from 3.3 to 3.8 GHz. The amplifier is packaged in a
low cost, leadless smT package. Utilizing a minimum
of external components the amplifier provides 31 dB
of gain and +32.5 dBm of saturated power from a
+5V supply voltage. The power control (Vpd) can be
used for full power down or rf output power/current
control. for +22 dBm ofDm output power (64 QAm,
54 mbps), the HmC409lp4 & HmC409lp4e achieve
an error vector magnitude (eVm) of 2%, meeting
wimAX 802.16 linearity requirements.
Electrical Specifications,
T
A
= +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V
parameter
frequency range
Gain
Gain Variation over Temperature
input return loss
output return loss
output power for 1dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
[2]
error Vector magnitude @ 3.5 GHz
(54 mbps ofDm signal @ +22 dBm pout)
noise figure
supply Current (icq)
Control Current (ipd)
switching speed
Bias Current (ibias)
Vs= Vcc1 + Vcc2= +5V
Vpd = +5V
ton, toff
5.8
615
4
20
10
41
28
30
min.
Typ.
3.3 - 3.4
32
0.04
10
13
30
32
45
42
28
0.05
29
max.
min.
Typ.
3.4 - 3.6
31.5
0.04
15
14
30.5
32.5
45.5
2
5.8
615
4
20
10
6
615
4
20
10
41
28
0.05
28
max.
min.
Typ.
3.6 - 3.8
30
0.035
15
10
30.5
32
45
0.045
max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
%
dB
mA
mA
ns
mA
note 1: specifications and data reflect HmC409lp4 measured using the application circuit found herein. Contact the HmC Applications Group for
assistance in optimizing performance for your application.
note 2: Two-tone output power of +15 dBm per tone, 1 mHz spacing.
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC409LP4
/
409LP4E
v03.0710
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Gain vs. Temperature
38
35
Broadband Gain & Return Loss
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2
2.5
3
RESPONSE (dB)
GAIN (dB)
S21
S11
S22
32
29
26
23
20
+25 C
+85 C
-40 C
9
3.6
3.8
4
3.5
4
4.5
5
3
3.2
3.4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
-10
-15
-20
-25
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
Power Down Isolation vs. Temperature
0
-10
ISOLATION (dB)
+25 C
+85 C
-40 C
-20
-30
-40
-50
-60
3
3.2
3.4
+25 C
+85 C
-40 C
3.6
3.8
4
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
Amplifiers - lineAr & power - smT
HMC409LP4
/
409LP4E
v03.0710
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Psat vs. Temperature
36
34
32
PSAT (dBm)
30
28
26
24
22
+25 C
+85 C
-40 C
P1dB vs. Temperature
36
34
32
P1dB (dBm)
30
28
26
24
+25 C
+85 C
-40 C
9
Amplifiers - lineAr & power - smT
22
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
FREQUENCY (GHz)
Output IP3 vs. Temperature
50
Power Compression @ 3.5 GHz
40
Pout (dBm), GAIN (dB), PAE (%)
35
30
25
20
15
10
5
0
-20
Pout (dBm)
Gain (dB)
PAE (%)
46
IP3 (dBm)
42
+25 C
+85 C
-40 C
38
34
30
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
-16
-12
-8
-4
0
4
8
INPUT POWER (dBm)
Gain & Power vs. Supply Voltage
35
GAIN (dB), P1dB (dBm), Psat (dBm)
34
33
32
31
30
29
28
4.75
Gain
Psat
P1dB
Noise Figure vs. Temperature
12
10
NOISE FIGURE (dB)
8
6
4
2
0
+25 C
+85 C
-40 C
5
Vcc SUPPLY VOLTAGE (Vdc)
5.25
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
9-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC409LP4
/
409LP4E
v03.0710
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Power Dissipation
800
700
POWER DISSIPATION (W)
600
500
Icc (mA)
4.4
4
3.6
3.2
2.8
2.4
2
-20
Gain, Power & Quiescent
Supply Current vs. Vpd @ 3.5 GHz
40
GAIN (dB), P1dB (dBm), Psat (dBm)
35
30
25
20
15
10
5
0
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Vpd (Vdc)
Gain
Psat
P1dB
Icc
Max Pdiss @ +85C
400
300
200
100
0
5.5
9
-16
-12
-8
-4
0
4
8
INPUT POWER (dBm)
EVM vs. Temperature @ 3.5 GHz OFDM
54 Mbps Signal
14
ERROR VECTOR MAGNITUDE (%)
12
10
8
6
4
2
0
10
12
14
16
18
20
22
24
26
28
30
OUTPUT POWER (dBm)
+25 C
+85 C
-40 C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
Amplifiers - lineAr & power - smT
HMC409LP4
/
409LP4E
v03.0710
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
Typical Supply, Current vs. Supply
Voltage, Vcc1 = Vcc2 = Vpd
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
rf input power (rfin)(Vs = Vpd = +5Vdc)
Junction Temperature
+5.5 Vdc
+5.5 Vdc
+10 dBm
150 °C
3.74 w
17.4 °C/w
-65 to +150 °C
-40 to +85 °C
Vs (Vdc)
4.75
5.0
5.25
icq (mA)
516
615
721
9
Amplifiers - lineAr & power - smT
Continuous pdiss (T = 85 °C)
(derate 57.5 mw/°C above 85 °C)
Thermal resistance
(junction to ground paddle)
storage Temperature
operating Temperature
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe.
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
Package Information
part number
HmC409lp4
HmC409lp4e
package Body material
low stress injection molded plastic
roHs-compliant low stress injection molded plastic
lead finish
sn/pb solder
100% matte sn
msl rating
msl3
msl3
[1]
package marking
[3]
H409
XXXX
H409
XXXX
[2]
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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