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SMAJ64C

产品描述Trans Voltage Suppressor Diode, 400W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小69KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SMAJ64C概述

Trans Voltage Suppressor Diode, 400W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, GREEN, PLASTIC, SMA, 2 PIN

SMAJ64C规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PDSO-C2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性UL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
最大击穿电压86.9 V
最小击穿电压71.1 V
最大钳位电压114 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值反向功率耗散400 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
最大重复峰值反向电压64 V
表面贴装YES
技术AVALANCHE
端子面层PURE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30
Base Number Matches1

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SMAJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
400 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
400 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle (300W above 78V).
SMA/DO-214AC
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.103(2.61)
.078(1.99)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.064 gram
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote 1)
O
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3)
Maximum Instantaneous Forward Voltage at 25.0A
for Unidirectional Only
Operating and Storage Temperature Range
Symbol
P
PK
Pd
I
FSM
V
F
Value
Minimum 400
1
40.0
3.5
Units
Watts
Watts
Amps
Volts
O
T
J
, T
STG
-55 to + 150
C
O
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above
T
A
=25 C
Per Fig. 2.
2. Mounted on 0.2 x 0.2" (5 x 5mm) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per
Minute Maximum.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix forTypes SMAJ5.0 through Types SMAJ170.
2. Electrical Characteristics Apply in Both Directions.
- 530 -

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