SB 1640
SCHOTTKY DIE SPECIFICATION
General Description: 40 V 16 A ( Standard
□Low)
VF，
ELECTRICAL CHARACTERISTICS
SYM
DC Blocking Voltage:
Ir=1mA(for wafer form) VRRM
Ir=0.5mA (for dice form)
Average Rectified Forward Current
IFAV
Maximum Instantaneous Forward Voltage
@ 1 Ampere, Ta=25℃
VF MAX
Maximum Instantaneous Reverse Voltage
@ VR= 43 Volt, Ta=25℃
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperature
TYPE: SB1640
( Single
□Dual)
Anode
Spec. Limit
40
16
0.480
0.450
Die Sort
45
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
0.400
0.350
mA
pF
310
125
-50 to +150
Amp
℃
℃
Specifications apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
B
Top-side Metal
S
i
O
2
Passivation
A
ITEM
Die Size
Top Metal Pad Size
Thickness (Min)
Thickness (Max)
μm
3124
2986
203
254
Mil
122.99
117.56
8.00
10.00
PS:
(1)Cutting street width is around 50μm (1.96mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
P+ Guard Ring
Back-side Metal
C
51单片机
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