SMM5727XZ
71 – 86GHz Low Noise Amplifier MMIC
FEATURES
• Wafer Level Chip Size Package with Solder Ball
•20dB Gain
•5dB Noise Figure
•Output power of 11 dBm at 1dB gain compression
DESCRIPTION
The Low Noise Amplifier (LNA) is a five stage GaAs HEMT MMIC which
operates between 71 and 86 GHz .
The LNA features small signal gain of 20dB, noise figure of 5dB and
output power of 11 dBm at 1dB gain compression.
The flip chip die can be used in solder reflow process.
Sumitomo’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Target Specification
ABSOLUTE MAXIMUM RATING
Item
Drain Voltage
Gate Voltage
Input Power Level
Storage Temperature
RECOMMENDED OPERATING CONDITIONS
Item
Drain Voltage
Gate Voltage
Input Power Level
Operating Backside Temperature
Symbol
V
D
V
G
P
in
T
OP
Condition
6
-3 to 3
Up to -10
-40 to +85
Unit
V
V
dBm
deg.C
Symbol
V
D
V
G
P
in
T
stg
Rating
7
-4
+13
-40 to +125
Unit
V
V
dBm
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
71-76GHz
Item
Frequency Range
Gain
Noise Figure
3rd Order Input Intercept Point
Output Power at 1dB G.C.P.
Input Return Loss
Output Return Loss
Total Current Consumption
Symbol
f
Ga
NF
IIP3
P1dB
RL
IN
RL
OUT
I
D
Test Conditions
Min.
V
D1
=V
D2
=6V
I
D
=60mA
*1
81-86GHz
Limits
Max.
76
25.5
6
-
-
-
-
-
Min.
81
17
-
-5.5
8.5
-
-
-
Typ.
-
20.5
5.5
0
11
7
10
60
Max.
86
24.5
6.5
-
-
-
-
-
GHz
dB
dB
dBm
dBm
dB
dB
mA
Unit
Limits
Typ.
-
21.5
5
0
12
7
12
60
71
17
-
-5
10
-
-
-
*1: Adjust V
G
Voltage between -3 to 3V to set to I
D
=I
D1
+I
D2
=60mA
G.C.P. : Gain Compression Point
Note: RF parameter sample size 22 pcs. / Wafer, Criteria (accept/reject)=(0/1)
Edition 1.0
Dec. 2014
1
SMM5727XZ
71 – 86GHz Low Noise Amplifier MMIC
Evaluation Board and Measurement Information
V
G
The calibration plane
RF in
5727
RF out
V
D1
V
D2
V
D1
V
D2
V
G
external line
V
D1
=V
D2
=6V
I
D1
+I
D2
=60mA
The all measurement data has include external line loss(0.3dB@86GHz) of EB.
Edition 1.0
Dec. 2014
2