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MMBT1616-TP

产品描述Small Signal Bipolar Transistor,
产品类别分立半导体    晶体管   
文件大小446KB,共2页
制造商Micro Commercial Components (MCC)
下载文档 详细参数 选型对比 全文预览

MMBT1616-TP概述

Small Signal Bipolar Transistor,

MMBT1616-TP规格参数

参数名称属性值
包装说明,
Reach Compliance Codecompliant
Base Number Matches1

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MMBT1616
Features
Halogen
free available upon request by adding suffix "-HF"
Capable of 350mWatts of Power Dissipation and
1A
Ic.
Operating and Storage Junction Temperatures: -55 to 150
Surface Mount SOT-23 Package
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking
Code:16
Thermal Resistance Junction to Ambient: 357
o
C/W
NPN General
Purpose Amplifier
SOT-23
A
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=2.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc,
I
E
=0)
Emitter
Cutoff Current
(V
EB
=6Vdc,
I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=2.0Vdc)
(I
C
=1.0Adc, V
CE
=2.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=1Adc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=1Adc, I
B
=50mAdc)
Base-Emitter Voltage
(I
C
=1Adc, I
B
=50mAdc)
Transition frequency
(I
C
=100mAdc, V
CE
=2Vdc, f=100MHz)
Collector Output
Capacitance
(V
CB
=10Vdec, I
E
=0, f=1.0MHz)
0.6
100
19
Min
50
60
6.0
100
100
Max
Units
Vdc
Vdc
F
E
C
C
B
B
E
Vdc
nAdc
G
H
J
nAdc
K
135
81
600
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
obo
0.3
1.2
0.7
Vdc
Vdc
Vdc
MHz
pF
Suggested Solder
Pad Layout
.031
.800
CLASSIFICATION OF hFE
RANK
RANGE
Y
135~270
G
200~400
L
300~600
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision: A
1 of
2
2015/10/20

MMBT1616-TP相似产品对比

MMBT1616-TP MMBT1616-TP-HF
描述 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Reach Compliance Code compliant compliant
Base Number Matches 1 1

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