UNISONIC TECHNOLOGIES CO.,LTD.
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
The
MJE13009
is designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220 V switchmode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
TO-3P
FEATURES
* V
CEO
400 V and 300 V
* Reverse Bias SOA with Inductive Loads @ T
C
= 100℃
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃
tc @ 8 A, 100℃ is 120 ns (Typ).
* 700 V Blocking Capability
* SOA and Switching Applications Information.
*Pb-free plating product number:MJE13009L
PIN CONFIGURATION
PIN NO.
1
2
3
PIN NAME
Base
Collector
Emitter
ORDERING INFORMATION
Order Number
Normal
Lead free
MJE13009-T3P-T MJE13009L-T3P-T
Package
TO-3P
Packing
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD
1
QW-R214-011,A
MJE13009
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak*
Continuous
Peak*
Continuous
Peak*
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
SYMBOL
V
CEO
V
CBO
I
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
J
T
STG
RATINGS
400
700
9
12
24
6
12
18
36
2
16
100
800
+150
-40 ~ +150
UNIT
V
V
V
A
A
A
W
mW/℃
W
mW/℃
℃
℃
Total Power Dissipation @ T
a
= 25℃
Derate above 25℃
Total Power Dissipation @ T
C
= 25℃
Derate above 25℃
Junction Temperature
Storage Temperature
*Pulse Test: Pulse Width = 5ms, Duty Cycle
≤
10%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1.55
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified.)
PARAMETER
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
V
CBO
=Rated Value
Emitter Cutoff Current
*ON CHARACTERISTICS
DC Current Gain
SYMBOL
V
CEO
I
CBO
I
EBO
h
FE1
h
FE 2
V
CE(sat)
TEST CONDITIONS
I
C
= 10mA, I
B
= 0
V
BE(off)
= 1.5Vdc
V
BE(off)
= 1.5Vdc, T
C
= 100℃
V
EB
= 9Vdc, I
C
= 0
I
C
= 5A,V
CE
= 5V
I
C
= 8A,V
CE
= 5V
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 8A, I
B
= 1.6A, T
C
= 100℃
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A, T
C
= 100℃
4
180
0.06
0.45
1.3
0.2
0.92
0.12
0.1
1
3
0.7
2.3
0.7
MIN
400
1
5
1
40
30
1
1.5
3
2
1.2
1.6
1.5
TYP
MAX UNIT
V
mA
mA
Current-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
V
BE(sat)
V
DYNAMIC CHARACTERISTICS
Transition frequency
f
T
I
C
= 500mA, V
CE
= 10V, f = 1MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
SWITCHING CHARACTERISTICS
(Resistive Load, Table 1)
Delay Time
t
DLY
V
CC
= 125Vdc, I
C
= 8A
Rise Time
t
R
I
B1
= I
B2
= 1.6A, t
P
= 25μs
Storage Time
t
S
Duty Cycle
≤1%
Fall Time
t
F
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
t
sv
I
C
=8A, V
clamp
=300V, I
B1
=1.6A
V
BE(off)
= 5V, T
C
= 100℃
Crossover Time
t
c
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
MHz
pF
µs
µs
µs
µs
µs
µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R214-011,A
MJE13009
CLASSIFICATION of hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
NPN EPITAXIAL SILICON TRANSISTOR
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
1N4933
0.001μF
33
MJE210
V
CC
RESISTIVE SWITCHING
+125V
L
MR826*
TEST CIRCUITS
5V
P
W
DUTY CYCLE
≤
10% 68
t
R
, t
F
≤
10 ns
1k
1k
+5V
1N4933
0.02μF
270
33 1N4933
2N2222
R
B
I
B
I
C
V
clamp
*SELECTED FOR
.
1 kV
V
CE
D.U.T.
2N2905
47
1/2W
100
–V
BE(off)
MJE200
51
R
C
TUT
R
B
SCOPE
5.1k
D1
1k
NOTE
PW and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
-4.0V
CIRCUIT VALUES
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200
µH/20
A
L
coil
= 200
µH
V
CC
= 20 V
V
clamp
= 300 Vdc
V
CC
= 125 V
R
C
= 15
Ω
D1 = 1N5820 or Equiv.
R
B
=
Ω
OUTPUT WAVEFORMS
+10V
25
µs
TEST WAVEFORMS
t
F
CLAMPED
I
C
I
CM
t
t
1
V
CE
V
CEM
TIME
t
2
V
clamp
t
2
≈
L
coil
(I
CM
)
V
clamp
t
F
t
1
≈
t
F
UNCLAMPED
9
t
2
t1 ADJUSTED TO
OBTAIN IC
L
coil
(I
CM
)
V
CC
Test Equipment
Scope–Tektronics
475 or Equivalent
0
-8V
t
R
, t
F
< 10 ns
Duty Cycle = 1.0%
R
B
and R
C
adjusted
for desired I
B
and I
C
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3
QW-R214-011,A
MJE13009
CIRCUIT
24A
NPN EPITAXIAL SILICON TRANSISTOR
LOAD LINE DIAGRAMS
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
12A
TURN–ON
TURN–OFF
+
V
CC
400V 1
1
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(off)
≤
9.0 V
DUTY CYCLE
≤
10%
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
TIME DIAGRAMS
I
C
Collector Current
SERIES SWITCHING
REGULATOR
T
C
= 100°C
V
CE
V
CC
TIME
t
V
CC
V
OUT
700V
COLLECTOR VOLTAGE
TIME
I
C
t
RINGING CHOKE
INVERTER
24A
Collector Current
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(off)
≤
9.0 V
DUTY CYCLE
≤
10%
V
CC
N
V
OUT
T
C
= 100°C
12A
t
OFF
t
ON
V
CE
V
CC+
N(V
O
)
V
CC
t
LEAKAGE SPIKE
TURN–OFF
TURN–ON
+ V
CC
V
CC
+N(V
OUT )
400V 1
700V 1
t
COLLECTOR VOLTAGE
PUSH–PULL
INVERTER/CONVERTER
24A
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
TURN–ON
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(off)
≤
9.0 V
DUTY CYCLE
≤
10%
2 V
CC
V
CC
400V 1
700V
1
I
C
t
OFF
t
ON
t
V
CE
2 V
CC
V
CC
t
V
OUT
Collector Current
T
C
= 100°C
12A
V
CC
TURN–OFF
+
COLLECTOR VOLTAGE
SOLENOID DRIVER
V
CC
Collector Current
24A
TURN–ON (FORWARD BIAS) SOA
t
ON
≤
10 ms
DUTY CYCLE
≤
10%
P
D
= 4000 W 2
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V
≤
V
BE(off)
≤
9.0 V
DUTY CYCLE
≤
10%
2 V
CC
400V 1
700V 1
I
C
T
C
= 100°C
12A
t
ON
V
CE
V
CC
t
OFF
t
SOLENOID
TURN–OFF
TURN–ON
+
V
CC
COLLECTOR VOLTAGE
t
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4
QW-R214-011,A
MJE13009
I
C
(A)
3
5
8
12
T
C
(℃)
25
100
25
100
25
100
25
100
t
sv
(ns)
770
1000
630
820
720
920
640
800
NPN EPITAXIAL SILICON TRANSISTOR
t
rv
(ns)
100
230
72
100
55
70
20
32
t
fi
(ns)
150
160
26
55
27
50
17
24
t
ti
(ns)
200
200
10
30
2
8
2
4
t
c
(ns)
240
320
100
180
77
120
41
54
TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage
waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
t
sv
= Voltage Storage Time, 90% I
B1
to 10% V
CEM
t
rv
= Voltage Rise Time, 10–90% V
CEM
t
fi
= Current Fall Time, 90–10% I
CM
t
ti
= Current Tail, 10–2% I
CM
t
c
= Crossover Time, 10% V
CEM
to 10% I
CM
An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
P
SWT
= 1/2 V
CC
I
C
(t
c
) f
Typical inductive switching waveforms are shown in Figure 14. In general, t
rv
+ t
fi
≈
t
c
. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t
c
and t
sv
) which are
guaranteed at 100℃.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
QW-R214-011,A
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