EEPROM, 128X16, Serial, CMOS, PDIP8, DIP-8
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP8,.3 |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES |
| 最大时钟频率 (fCLK) | 0.5 MHz |
| 数据保留时间-最小值 | 10 |
| 耐久性 | 100000 Write/Erase Cycles |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e0 |
| 长度 | 9.3 mm |
| 内存密度 | 2048 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 128 words |
| 字数代码 | 128 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 128X16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 1.8/6.5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.5 mm |
| 串行总线类型 | 3-WIRE |
| 最大待机电流 | 0.000001 A |
| 最大压摆率 | 0.005 mA |
| 最大供电电压 (Vsup) | 6.5 V |
| 最小供电电压 (Vsup) | 2.7 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| 最长写入周期时间 (tWC) | 10 ms |
| 写保护 | HARDWARE/SOFTWARE |
| Base Number Matches | 1 |
| S-2929CI10 | S-2939CI10 | S-2929CIF10 | S-2919CI10 | S-2939CIF10 | S-2919CIF10 | |
|---|---|---|---|---|---|---|
| 描述 | EEPROM, 128X16, Serial, CMOS, PDIP8, DIP-8 | EEPROM, 256X16, Serial, CMOS, PDIP8, DIP-8 | EEPROM, 128X16, Serial, CMOS, PDSO8, SOP-8 | EEPROM, 64X16, Serial, CMOS, PDIP8, DIP-8 | EEPROM, 256X16, Serial, CMOS, PDSO8, SOP-8 | EEPROM, 64X16, Serial, CMOS, PDSO8, SOP-8 |
| 零件包装代码 | DIP | DIP | SOIC | DIP | SOIC | SOIC |
| 包装说明 | DIP, DIP8,.3 | DIP, | LSOP, SOP8,.25 | DIP, DIP8,.3 | LSOP, | LSOP, SOP8,.3 |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES | DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES |
| 最大时钟频率 (fCLK) | 0.5 MHz | 0.5 MHz | 0.5 MHz | 0.5 MHz | 0.5 MHz | 0.5 MHz |
| 数据保留时间-最小值 | 10 | 10 | 10 | 10 | 10 | 10 |
| JESD-30 代码 | R-PDIP-T8 | R-PDIP-T8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 |
| 长度 | 9.3 mm | 9.3 mm | 5.2 mm | 9.3 mm | 5.2 mm | 5.2 mm |
| 内存密度 | 2048 bit | 4096 bit | 2048 bit | 1024 bit | 4096 bi | 1024 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 128 words | 256 words | 128 words | 64 words | 256 words | 64 words |
| 字数代码 | 128 | 256 | 128 | 64 | 256 | 64 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 128X16 | 256X16 | 128X16 | 64X16 | 256X16 | 64X16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | LSOP | DIP | LSOP | LSOP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE, LOW PROFILE | IN-LINE | SMALL OUTLINE, LOW PROFILE | SMALL OUTLINE, LOW PROFILE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.5 mm | 4.5 mm | 1.7 mm | 4.5 mm | 1.7 mm | 1.7 mm |
| 串行总线类型 | 3-WIRE | MICROWIRE | 3-WIRE | 3-WIRE | MICROWIRE | 3-WIRE |
| 最大供电电压 (Vsup) | 6.5 V | 6.5 V | 6.5 V | 6.5 V | 6.5 V | 6.5 V |
| 最小供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 4.4 mm | 7.62 mm | 4.4 mm | 4.4 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
| 是否无铅 | 含铅 | - | 含铅 | 含铅 | - | 含铅 |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | - | 不符合 |
| 耐久性 | 100000 Write/Erase Cycles | - | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | - | 100000 Write/Erase Cycles |
| JESD-609代码 | e0 | - | e0 | e0 | - | e0 |
| 封装等效代码 | DIP8,.3 | - | SOP8,.25 | DIP8,.3 | - | SOP8,.3 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 电源 | 1.8/6.5 V | - | 1.8/6.5 V | 1.8/6.5 V | - | 1.8/6.5 V |
| 最大待机电流 | 0.000001 A | - | 0.000001 A | 0.000001 A | - | 0.000001 A |
| 最大压摆率 | 0.005 mA | - | 0.005 mA | 0.005 mA | - | 0.005 mA |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 写保护 | HARDWARE/SOFTWARE | - | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | - | HARDWARE/SOFTWARE |
| 厂商名称 | - | - | ABLIC | ABLIC | ABLIC | ABLIC |
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