Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
包装说明 | DIP, DIP28,.3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 45 ns |
JESD-30 代码 | R-PDIP-T28 |
JESD-609代码 | e3 |
长度 | 34.7 mm |
内存密度 | 262144 bit |
内存集成电路类型 | NON-VOLATILE SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 28 |
字数 | 32768 words |
字数代码 | 32000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 32KX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装等效代码 | DIP28,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 5.1 mm |
最大待机电流 | 0.001 A |
最大压摆率 | 0.065 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Matte Tin (Sn) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
Base Number Matches | 1 |
U631H256DC45G1 | U631H256DC35G1 | U631H256DC25 | U631H256DK35G1 | U631H256DK45G1 | U631H256DK25G1 | U631H256DK35 | |
---|---|---|---|---|---|---|---|
描述 | Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28 | Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28 | Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28 | Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28 | Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28 | Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 |
是否Rohs认证 | 符合 | 符合 | 不符合 | 符合 | 符合 | 符合 | 不符合 |
包装说明 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 45 ns | 35 ns | 25 ns | 35 ns | 45 ns | 25 ns | 35 ns |
JESD-30 代码 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 |
JESD-609代码 | e3 | e3 | e0 | e3 | e3 | e3 | e0 |
长度 | 34.7 mm | 34.7 mm | 34.7 mm | 34.7 mm | 34.7 mm | 34.7 mm | 34.7 mm |
内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
内存集成电路类型 | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | - | - | - | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | 240 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 240 |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 5.1 mm | 5.1 mm | 5.1 mm | 5.1 mm | 5.1 mm | 5.1 mm | 5.1 mm |
最大待机电流 | 0.001 A | 0.001 A | 0.001 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
最大压摆率 | 0.065 mA | 0.075 mA | 0.095 mA | 0.08 mA | 0.07 mA | 0.1 mA | 0.08 mA |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn85Pb15) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn85Pb15) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
厂商名称 | - | - | - | Simtek | Simtek | Simtek | Simtek |
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