OM6038SM OM6040SM
OM6039SM OM6041SM
POWER MOSFET IN HERMETIC ISOLATED
SURFACE MOUNT PACKAGE
100V Thru 500V, Up To 10 Amp,
N-Channel Power MOSFETs In A
Hermetic Surface Mount Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged surface mount products feature the latest
advanced MOSFET and packaging technology. They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in surface mount applications such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ T
C
= 25°C
PART NUMBER
OM6038SM
OM6039SM
OM6040SM
OM6041SM
V
DS
100V
200V
400V
500V
R
DS(on)
.20Ω
.44Ω
1.05Ω
1.60Ω
I
D
14A
9A
5A
4A
SCHEMATIC
2 Drain
2
PIN CONNECTION
1
3
3.5
3 Gate
Pin 1:
Pin 2:
Pin 3:
Case:
1 Source
Source
Drain
Gate
Isolated
4 11 R1
Supersedes 1 05 R0
3.5 - 85
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6101ST / OM6038SM (100V)
Min. Typ. Max. Units Test Conditions
100
I
D
= 250
µA
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Current
0.2
Current
1
9.0
1.25
2.2
0.44
0.88
Ω
Ω
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
On-State Drain
Zero Gate Voltage Drain
0.1
0.25
1.0
Gate-Body Leakage (OM6002)
± 100
nA
mA
mA
A
V
V
Gate-Body Leakage (OM6102)
± 500
nA
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
V
GS
3.5
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6039SM (200V)
Parameter
BV
DSS
Drain-Source Breakdown
200
V
V
GS
= 0,
I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.0 A
Min. Typ. Max. Units Test Conditions
V
4.0
± 500
± 100
0.1
0.2
14
1.2
0.20
= 10 V, I
D
= 8 A
0.40
T
C
= 125°C
Ω
V
GS
= 10 V, I
D
= 8 A,
Ω
1.60
V
A
1.0
mA
0.25
mA
nA
nA
V
V
GS
= 0,
(T
C
= 25°C unless otherwise noted)
Parameter
BV
DSS
Drain-Source Breakdown
2.0
Voltage
V
GS(th)
Gate-Threshold Voltage
OM6038SM - OM6041SM
I
GSS
Gate-Body Leakage (OM6101)
I
GSS
Gate-Body Leakage (OM6001)
I
DSS
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Current
1
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
GS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A,
T
C
= 125°C
R
DS(on)
Static Drain-Source On-State
Resistance
1
DYNAMIC
4.0
750
250
100
15
35
38
23
ns
ns
ns
R
g
= 7.5
Ω,
V
DS
= 10 V
t
r
t
d(off)
t
f
ns
V
DD
= 30V, I
D
≅
8 A
t
d(on)
pF
f = 1 MHz
C
rss
pF
V
DS
= 25 V
C
oss
pF
V
GS
= 0
C
iss
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 8 A
(Ω)
g
fs
D
DYNAMIC
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3.0
5.8
780
150
55
9
18
45
27
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 5.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75V, I
D
≅
5.0 A
R
g
= 7.5
Ω,
V
GS
=10 V
(Ω)
-9
(Body Diode)
G
3.5 - 86
- 14
the integral P-N
S
g
fs
Forward
Transductance
1
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
A
Modified MOSPOWER
symbol showing
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
Continuous Source Current
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
A
Modified MOSPOWER
symbol showing
G
D
I
S
Continuous Source Current
(Body Diode)
- 56
A
I
SM
Source
Current
1
the integral P-N
(Body Diode)
- 2.5
- 2.5
100
ns
V
V
Junction rectifier.
- 36
A
S
Junction rectifier.
V
SD
Diode Forward Voltage
1
T
C
= 25°C, I
S
= -14 A, V
GS
= 0
T
C
= 25°C, I
S
= -12 A, V
GS
= 0
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
T
C
= 25°C, I
S
= -9 A, V
GS
= 0
-2
-2
t
rr
Reverse Recovery Time
250
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
V
V
ns
T
C
= 25°C, I
S
= -8 A, V
GS
= 0
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6104ST / OM6041SM (500V)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Current
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
2.9
On-State Drain
Current
1
4.5
3.25 4.00
1.6
3.3
Ω
Ω
0.2
Zero Gate Voltage Drain
0.1
Gate-Body Leakage (OM6004)
± 100
0.25
1.0
Gate-Body Leakage (OM6104)
± 500
nA
nA
mA
mA
A
V
V
Gate-Threshold Voltage
2.0
4.0
V
500
V
V
GS
= 0,
I
D
= 250
µA
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6103ST / OM6040SM (400V)
Min. Typ. Max. Units Test Conditions
400
I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.0 A
V
GS
Parameter
V
4.0
± 500
± 100
0.1
0.2
5.5
2.4
1.05
= 10 V, I
D
= 3.0 A
2.0
T
C
= 125°C
Ω
V
GS
= 10 V, I
D
= 3.0 A,
Ω
3.15
V
A
1.0
mA
0.25
mA
nA
nA
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
2.0
Voltage
V
GS(th)
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
I
GSS
Gate-Body Leakage (OM6103)
I
GSS
Gate-Body Leakage (OM6003)
I
DSS
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Current
1
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A,
T
C
= 125°C
R
DS(on)
Static Drain-Source On-State
Resistance
1
g
fs
700
70
20
18
20
40
25
ns
ns
ns
R
g
= 10
Ω,V
GS
= 10 V
ns
V
DD
= 175 V, I
D
≅
3.0 A
t
r
t
d(off)
t
f
pF
f = 1 MHz
C
rss
t
d(on)
pF
V
DS
= 25 V
C
oss
pF
V
GS
= 0
C
iss
Forward Transductance
1
3.0
3.6
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 3.0 A
g
fs
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.5
2.8
700
90
30
18
20
42
25
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 2.5 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 225 V, I
D
≅
2.5 A
R
g
= 7.5
Ω,
V
GS
= 10 V
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
- 5.5
- 22
A
A
Modified MOSPOWER
symbol showing
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
I
S
Continuous Source Current
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
(Body Diode)
- 4.5
- 18
I
SM
Source Current
1
the integral P-N
Junction rectifier.
(Body Diode)
- 1.6
- 2.5
470
V
V
ns
V
SD
Diode Forward Voltage
1
T
C
= 25°C, I
S
= -5.5 A, V
GS
= 0
T
C
= 25°C, I
S
= -4.5 A, V
GS
= 0
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
V
SD
Diode Forward
Voltage
1
V
SD
t
rr
Diode Forward
Voltage
1
Reverse Recovery Time
430
- 1.4
-2
t
rr
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
OM6038SM - OM6041SM
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
(Ω)
(Ω)
3.5 - 87
DYNAMIC
DYNAMIC
A
A
V
V
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25°C, I
S
= -4.5 A, V
GS
= 0
T
C
= 25°C, I
S
= -4 A, V
GS
= 0
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
3.5
OM6038SM - OM6041SM
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Junction To Ambient
T
J
T
stg
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 MΩ)
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
Storage Temperature Range
-55 to 150
225
-55 to 150 -55 to 150 -55 to 150
225
225
225
°C
°C
OM6038
100
100
± 14
±7
± 45
50
25
0.4
.0125
OM6039
200
200
±9
±5
± 35
50
25
0.4
.0125
OM6040
400
400
±5
±3
± 18
50
25
0.4
.0125
OM6041
500
500
±4
±2
± 10
50
25
0.4
.0125
V
A
A
A
W
W
W/°C
W/°C
Units
V
Lead Solder Temperature (1/16" from case for 5 secs.)
1 Pulse Test:
Pulse width ≤ 300 µsec. Duty Cycle ≤ 2%.
2 Package PIN Limitations
= 15 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
2.5
80
°C/W
°C/W
Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
90
P
D
- POWER DISSIPATION (WATTS)
75
60
Rθ
JC
= 2.5 °C/W
45
30
15
0
0
25
50
75
100
125 150
175
.020
.350 MIN.
.200
.100
.425
.425
.035 WIDE
FLAT 3 PLCS.
3.5
± .020
.115
.160
T
C
- CASE TEMPERATURE (°C)
.080
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
