OM6034NM OM6036NM
OM6035NM OM6037NM
POWER MOSFET IN HERMETIC SURFACE
MOUNT PACKAGE
100V Thru 1000V, Up To 30 Amp, N-Channel
MOSFET In A Surface Mount Package
FEATURES
•
•
•
•
•
•
Surface Mount Hermetic Package
High Current/Low R
DS(on)
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Small Size
Available Screened to MIL-S-19500, TX, TXV, S Levels
DESCRIPTION
This series of hermetic surface mount product features the latest advanced MOSFET
and packaging technology. They are ideally suited for Military surface mount
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS AT T
C
= 25°C
PART NUMBER
OM6034NM
OM6035NM
OM6036NM
OM6037NM
V
DS
100V
200V
500V
1000V
R
DS(on)
.065Ω
.095Ω
0.4Ω
3Ω
I
D
35A
30A
15A
5A
SCHEMATIC
3 Drain
3.5
2 Gate
1 Source
4 11 R1
Supersedes 1 05 R0
3.5 - 81
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6034NM (100V)
Min. Typ. Max. Units Test Conditions
100
I
D
= 250
µA
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Current
0.2
Current
1
30
1.36 1.52
.085 .095
0.14 0.17
Ω
Ω
I
D(on)
V
DS(on)
Voltage
1
R
DS(on)
Resistance
1
R
DS(on)
Resistance
1
Static Drain-Source On-State
Static Drain-Source On-State
Static Drain-Source On-State
On-State Drain
Zero Gate Voltage Drain
0.1
0.25
1.0
Gate-Body Leakage (OM6006)
± 100
Gate-Body Leakage (OM6106)
± 500
nA
nA
mA
mA
A
V
V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
3.5
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6035NM (200V)
Parameter
BV
DSS
200
V
Drain-Source Breakdown
V
GS
= 0,
I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
Min. Typ. Max. Units Test Conditions
V
4.0
± 500
± 100
0.1
0.2
35
1.1
.055 .065
= 10 V, I
D
= 20 A
.09
T
C
= 125°C
0.11
Ω
V
GS
= 10 V, I
D
= 20 A,
Ω
1.3
V
A
1.0
mA
0.25
mA
nA
nA
V
V
GS
= 0,
(T
C
= 25°C unless otherwise noted)
Parameter
BV
DSS
2.0
Drain-Source Breakdown
Voltage
V
GS(th)
Gate-Threshold Voltage
OM6034NM - OM6037NM
I
GSS
Gate-Body Leakage (OM6105)
I
GSS
Gate-Body Leakage (OM6005)
I
DSS
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Current
1
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125°C
R
DS(on)
Static Drain-Source On-State
Resistance
1
DYNAMIC
9.0
2700
1300
470
28
45
100
50
ns
ns
ns
R
g
= 5.0
Ω,
V
GS
= 10 V
ns
V
DD
= 30 V, I
D
≅
20 A
t
r
t
d(off)
t
f
t
d(on)
pF
f = 1 MHz
C
rss
pF
V
DS
= 25 V
C
oss
pF
V
GS
= 0
C
iss
10
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 20 A
(Ω)
g
fs
D
DYNAMIC
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10.0 12.5
2400
600
250
25
60
85
38
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 16 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
≅
16 A
R
g
= 5.0
Ω,
V
GS
= 10 V
(Ω)
- 30
(Body Diode)
G
3.5 - 82
- 40
- 160
- 2.5
400
ns
V
A
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
g
fs
Forward Transductance
1
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
I
S
Continuous Source Current
Continuous Source Current
Source Current
1
(Body Diode)
V
SD
Diode Forward
Voltage
1
(Body Diode)
A
- 120
-2
A
V
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
I
SM
Source Current
1
(Body Diode)
S
V
SD
Diode Forward
Voltage
1
T
C
= 25°C, I
S
= -40 A, V
GS
= 0
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
T
C
= 25°C, I
S
= -30 A, V
GS
= 0
t
rr
Reverse Recovery Time
350
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
ns
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
t
rr
Reverse Recovery Time
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6037NM (1000V)
Parameter
BV
DSS
Drain-Source Breakdown
1000
2.0
100
-100
0.25
1.0
nA
nA
mA
mA
4.0
V
V
Voltage
V
GS(th)
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
Drain Current
I
GSSF
I
GSSR
I
DSS
V
GS
= 0,
I
D
= 250
µA
Min. Typ. Max. Units Test Conditions
STATIC P/N OM6036NM (500V)
Min. Typ. Max. Units Test Conditions
500
I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
≥ 2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.0 A
V
GS
T
C
= 25° unless otherwise noted
Parameter
V
4.0
± 500
± 100
0.1
0.2
13
2.1
0.3
= 10 V, I
D
= 7.0 A
Resisitance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
6.0
Ω
V
GS
BV
DSS
V
GS
= 0,
2.0
nA
nA
mA
mA
A
2.8
0.4
Ω
T
C
= 125°C
V
GS
= 10 V, I
D
= 7.0 A,
Ω
R
DS(on)
Static Drain-Source On-State
V
I
D(on)
On-State Drain Current
V
Drain-Source Breakdown
Voltage
V
GS(th)
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
T
C
= 125° C
I
GSS
0.25
1.0
Gate-Body Leakage (OM6108)
I
GSS
Gate-Body Leakage (OM6008)
I
DSS
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
V
DS(on)
Static Drain-Source On-State
5.0
3.0
Ω
A
V
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
GS
Voltage
1
R
DS(on)
Static Drain-Source On-State
= 10 V, I
D
= 2.5 A
= 10 V, I
D
= 2.5 A
T
C
= 100°C
Resistance
1
0.66 0.88
R
DS(on)
Static Drain-Source On-State
Resistance
1
DYNAMIC
DYNAMIC
S(Ω) V
DS
≥ 2 V
DS(on)
, I
D
= 7.0 A
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
t
f
pF
pF
pF
ns
ns
ns
ns
R
g
= 5.0
Ω,
= V
GS
= 10 V
V
DD
= 210 V, I
D
≅
7.0 A
f = 1 MHz
V
DS
= 25 V
V
GS
= 0
5.0
2600
280
40
30
46
75
31
7.2
(Ω)
D
g
fs
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
2600
350
150
65
55
S
C
iss
Input Capacitance
pF
pF
pF
ns
ns
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
T
r(
V
off)
Off-Voltage Rise Time
Fall Time
62
25
ns
ns
t
f
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
- 13
- 52
- 1.4
700
ns
V
A
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
I
S
Continuous Source Current
Continuous Source Current
(Body Diode)
Source Current
2
(Body Diode)
V
SD
Diode Forward
Voltage
1
6
24
2.5
A
A
V
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward
Voltage
1
T
C
= 25°C, I
S
= -13 A, V
GS
= 0
T
J
= 150°C, I
F
= I
S
,
dl
F
/ds = 100 A/µs
t
rr
Reverse Recovery Time
t
rr
Reverse Recovery Time
1100
ns
OM6034NM - OM6037NM
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
2%.
1 Pulse Test:
Pulse Width ≤ 300µsec, Duty Cycle ≤
1.5%.
(Ω)
3.5 - 83
Forward
Transductance
1
V
DS
= 25 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25°C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/µs
3.5
OM6034NM-OM6037NM
ABSOLUTE MAXIMUM RATINGS:
V
DS
V
DGR
I
D
@ T
C
= 25°C
V
GS
V
GSM
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction to Case
Junction to Ambient
T
J
T
stg
Lead Temperature
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1MΩ)
Continuous Drain Current
Continuous Gate-Source Voltage
Gate-Source Voltage
Non-Repetitive (t
p
≤ 50µs)
Pulsed Drain Current
1
(T
C
= 25°C unless otherwise noted)
OM6034
100
100
30
±20
±40
105
100
35
1.0
.025
-55 to
150
225
OM6035
200
200
25
±20
±40
60
100
35
1.0
.025
-55 to
150
225
OM6036
500
500
11
±20
±40
65
100
35
1.0
.025
-55 to
150
225
OM6037
1000
1000
4
±20
±40
17
100
35
1.0
.025
-55 to
150
225
°C
°C
Units
V
V
A
V
V
A
W
W
W/°C
W/°C
Max. Power Dissipation
Max. Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
Storage Temperature Range
(At case for 5 seconds)
1
1 Pulse Test:
Pulse Width ≤ 300
µ
sec, Duty Cycle ≤
2%.
THERMAL RESISTANCE (MAXIMUM)
at T
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
A
= 25°C
°C/W
°C/W Free Air Operation
1.0
40
POWER DERATING
P
D
- POWER DISSIPATION (WATTS)
180
150
120
90
60
30
0
0
25
50
75
100 125 150 175
T
C
- CASE TEMPERATURE (°C)
Rθ
JC
= 1.0 C/W
PIN CONNECTION
1
2
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
3
MECHANICAL OUTLINE
.140
.140
.015
.075
.140
.075
.500
.157
.030
MIN.
3.5
.625
.415
.062
.375
TOP VIEW
SIDE VIEW
BOTTOM VIEW
编程基础
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