OM1N100SA OM5N100SA OM1N100ST
OM3N100SA OM6N100SA OM3N100ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM1N100SA
OM3N100SA
OM5N100SA
OM6N100SA
OM3N100ST
OM1N100ST
R
DS(on)
8.0
5.2
3.0
2.0
5.4
8.2
I
D
1.0A
3.5A
5.0A
6.0A
3.5A
1.0A
3.1
SCHEMATIC
DRAIN
PIN CONNECTION
TO-254AA
TO-257AA
GATE
SOURCE
1 2 3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1 2 3
4 11 R1
Supersedes 2 05 R0
3.1 - 15
3.1
OM1N100SA/ST Series
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM1N100SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
Drain Current
I
D(on)
On-State Drain Current
1.0
SA
ST
SA
ST
2.0
(See Note 3)
1000
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM3N100SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
3.5
SA
ST
SA
ST
2.0
(See Note 3)
1000
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
A
8.0
8.2
15.0
15.4
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.
V
GS
= 10 V
V
GS
= 10 V
I
D
=.5A
V
GS
= 10 V
I
D
=.5A, T
C
= 100° C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
A
5.2
5.4
10.0
10.4
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max
V
GS
= 10 V
V
GS
= 10 V
I
D
=.5A
V
GS
= 10 V
I
D
=.5A, T
C
= 100° C
R
DS(on)
Static Drain-Source On-State
Resisitance
1, 3
R
DS(on)
Static Drain-Source On-State
Resistance
1, 3
R
DS(on)
Static Drain-Source On-State
Resistance
1, 3
R
DS(on)
Static Drain-Source On-State
Resistance
1, 3
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
950
110
40
90
90
115
75
S
pF
pF
pF
ns
ns
ns
ns
VDD = 600 V, ID = 3.5
RG = 50W VGS = 10 V
,
DYNAMIC
V
DS
= 10V, I
D
= 1 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
950
110
40
90
90
115
75
S
pF
pF
pF
ns
ns
ns
ns
V
DD
= 600 V,
I
D
= 3.5
RG = 50W VGS
=
10 V
,
3.1 - 16
V
DS
= 10, I
D
= 1.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
2
900
2.5
V
ns
Reverse Recovery Time
14
A
3.5
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
2
900
3.5
14
2.5
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/ms, T
J
= 150 C
V
SD
t
rr
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/ms, T
J
= 150 C
Reverse Recovery Time
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
OM1N100ST - All characteristics the same except R
DS(on)
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
OM3N100ST - All characteristics the same except R
DS(on)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM5N100SA
(See Note 3)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
Drain Current
I
D(on)
On-State Drain Current
5.0
2.0
1000
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6N100SA
(See Note 3)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
6.0
2.0
1000
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
A
3.0
6.0
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
T
C
= 100 C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
A
2.0
4.0
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A
T
C
= 100° C
R
DS(on)
Static Drain-Source On-State
Resisitance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
t
f
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Fall Time
4.0
2600
350
150
65
55
62
25
S
pF
pF
pF
ns
ns
ns
ns
V
DD
= 800 V,
I
D
=6A
RG = 7W VGS
=
10 V
,
DYNAMIC
V
DS
= 25 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
t
f
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Fall Time
4.0
2600
350
150
65
55
62
25
S
pF
pF
pF
ns
ns
ns
ns
V
DD
= 800 V,
I
D
= 6A
RG = 7W VGS
=
10 V
,
3.1 - 17
V
DS
= 25V, I
D
= 3.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
T
r(
V
off)
Off-Voltage Rise Time
T
r
(V
off
) Off-Voltage Rise Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
2
24
2.5
1100
A
V
ns
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
6
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
2
6
24
2.5
1000
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
S
OM1N100SA/ST Series
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/ms
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
I
F
= I
S
,V
DD
= 100 V
dl
F
/ds = 100 A/ms, T
J
= 150 C
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3.
Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3.
Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package
3.1
OM1N100SA/ST Series
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
OM1N100SA OM3N100SA OM5N100SA OM6N100SA
OM1N100ST OM3N100ST
Units
I
AR
Avalanche Current
(Repetitive or Non-Repetitive)
T
j
= 25°C
T
j
= 100°C
3.5
2
130
3.5
2
130
6
3.4
850
6
3.4
850
A
A
mJ
E
AS
Single Pulse Avalanche Energy
Starting T
j
= 25°C, I
D
= I
AR
,
V
DD
= 25V
E
AR
Repetitive Avalanche Energy
(Pulse width limited by T
J
max,
d
< 1%)
6
6
16
16
mJ
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
=100°C
Junction-To-Case
Drain-Source Voltage
Drain-Source Voltage (R
GS
= 20k )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1000
1000
.50
.30
14
±20
90
32
.87
.020
1000
1000
3.5
2.0
14
±20
90
32
.87
.020
1000
1000
5.0
3.1
24
±20
130
51
2.10
.020
1000
1000
6.0
3.7
24
±20
130
51
2.10
.020
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction-To-Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10secs.)
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
THERMAL RESISTANCE
3.1
R
thJC
Junction-To-Case
Max.
1.15
1.15
.48
.48
°C/W
MECHANICAL OUTLINE
TO-257AA
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
.550
.510
.005
.800
.790
.144 DIA.
TO-254AA
.545
.535
.050
.040
.150
.140
.685
.665
.550
.530
.750
.500
.005
.045
.035
.150 TYP.
.260
.249
.150 TYP.
.035
.025
.100 TYP.
.120 TYP.
PACKAGE OPTIONS
FET 4 FET 3
G SDGSD
D SGGS D
D
S
FET 1
G
G
S
FET 2
D
FET 1
FET 3
Z-TAB
6 PIN SIP
MOD PAK
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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