FIFO, 64KX9, 35ns, Asynchronous, CMOS
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
最长访问时间 | 35 ns |
最大时钟频率 (fCLK) | 22.5 MHz |
周期时间 | 45 ns |
JESD-30 代码 | R-XDMA-T28 |
JESD-609代码 | e0 |
内存密度 | 589824 bit |
内存集成电路类型 | OTHER FIFO |
内存宽度 | 9 |
功能数量 | 1 |
端子数量 | 28 |
字数 | 65536 words |
字数代码 | 64000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 64KX9 |
输出特性 | 3-STATE |
可输出 | NO |
封装主体材料 | UNSPECIFIED |
封装代码 | DIP |
封装等效代码 | DIP28,.6 |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
并行/串行 | PARALLEL |
电源 | 5 V |
认证状态 | Not Qualified |
最大待机电流 | 0.048 A |
最大压摆率 | 0.72 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
Base Number Matches | 1 |
IDT7M208S35CB | IDT7M208S25C | IDT7M209S25C | IDT7M208S30CB | IDT7M209S35CB | IDT7M209S20C | IDT7M209S30CB | IDT7M208S20C | |
---|---|---|---|---|---|---|---|---|
描述 | FIFO, 64KX9, 35ns, Asynchronous, CMOS | FIFO, 64KX9, 25ns, Asynchronous, CMOS | FIFO, 128KX9, 25ns, Asynchronous, CMOS | FIFO, 64KX9, 30ns, Asynchronous, CMOS | FIFO, 128KX9, 35ns, Asynchronous, CMOS | FIFO, 128KX9, 20ns, Asynchronous, CMOS | FIFO, 128KX9, 30ns, Asynchronous, CMOS | FIFO, 64KX9, 20ns, Asynchronous, CMOS |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 35 ns | 25 ns | 25 ns | 30 ns | 35 ns | 20 ns | 30 ns | 20 ns |
周期时间 | 45 ns | 35 ns | 35 ns | 40 ns | 45 ns | 30 ns | 40 ns | 30 ns |
JESD-30 代码 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 589824 bit | 589824 bit | 1179648 bit | 589824 bit | 1179648 bit | 1179648 bit | 1179648 bit | 589824 bit |
内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 65536 words | 65536 words | 131072 words | 65536 words | 131072 words | 131072 words | 131072 words | 65536 words |
字数代码 | 64000 | 64000 | 128000 | 64000 | 128000 | 128000 | 128000 | 64000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 70 °C | 70 °C | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C |
组织 | 64KX9 | 64KX9 | 128KX9 | 64KX9 | 128KX9 | 128KX9 | 128KX9 | 64KX9 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
可输出 | NO | NO | NO | NO | NO | NO | NO | NO |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大压摆率 | 0.72 mA | 0.56 mA | 0.56 mA | 0.72 mA | 0.72 mA | 0.56 mA | 0.72 mA | 0.56 mA |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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