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18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
18Mb ZBT SRAM
Features
• High frequency and 100 percent bus utilization
• Single 3.3V ±5 percent or 2.5V ±5 percent power supply
• Separate 3.3V ±5 percent or 2.5V ±5 percent isolated
output buffer supply (V
DD
Q)
• Advanced control logic for minimum control signal
interface
• Individual byte write controls may be tied LOW
• Single R/W# (read/write) control pin/ball
• CKE# pin/ball to enable clock and suspend operations
• Three chip enables for simple depth expansion
• Clock-controlled and registered addresses, data
I/Os, and control signals
• Internally self-timed, fully coherent WRITE
• Internally self-timed, registered outputs to eliminate
the need to control OE#
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Linear or Interleaved Burst Modes
• Burst feature (optional)
• Pin and ball/function compatibility with 2Mb, 4Mb,
and 8Mb ZBT SRAM
®
MT55L1MY18P, MT55V1MV18P,
MT55L512Y32P, MT55V512V32P,
MT55L512Y36P, MT55V512V36P
3.3V V
DD
, 3.3V or 2.5V I/O; 2.5V V
DD
, 2.5V I/O
Figure 1: 100-Pin TQFP
JEDEC-Standard MS-026 BHA (LQFP)
Figure 2: 165-Ball FBGA
JEDEC-Standard MS-216 (Var. CAB-1)
Options
• Timing (Access/Cycle/MHz)
3.2ns/5ns/200 MHz
3.5ns/6ns/166 MHz
4.2ns/7.5ns/133 MHz
5ns/10ns/100 MHz
• Configurations
3.3V V
DD
, 3.3V, or 2.5V I/O
1 Meg x 18
512K x 32
512K x 36
2.5V V
DD
, 2.5V I/O
1 Meg x 18
512K x 32
512K x 36
• Packages
100-pin TQFP
165-ball, 13mm x 15mm FBGA
• Operating Temperature Range
Commercial (0ºC
£
T
A
£
+70ºC)
Industrial (-40ºC
£
T
A
£
+85ºC)
NOTE:
TQFP
Marking
-5
-6
-7.5
-10
MT55L1MY18P
MT55L512Y32P
MT55L512Y36P
MT55V1MV18P
MT55V512V32P
MT55V512V36P
T
F
1
None
IT
2
Part Number Example:
MT55L512Y36PT-10
General Description
The Micron
®
Zero Bus Turnaround™ (ZBT
®
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron’s 18Mb ZBT SRAMs integrate a 1 Meg x 18,
512K x 32, or 512K x 36 SRAM core with advanced syn-
chronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
1
©2003 Micron Technology, Inc.
1. A Part Marking Guide for the FBGA devices can be found on
Micron’s Web site—http://www.micron.com/numberguide.
2. Contact Factory for availability of Industrial Temperature
devices.
18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1MY18P_16_D.fm – Rev. D, Pub. 2/03
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
for easy depth expansion (CE2, CE2#), cycle start input
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc# and BWd#), and
read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK) and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin/ball (MODE) that selects between interleaved and
linear burst modes. MODE may be tied HIGH, LOW or
left unconnected if burst is unused. The data out (Q) is
enabled by OE#. WRITE cycles can be from one to four
bytes wide as controlled by the write control inputs.
All READ, WRITE, and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst
addresses can be internally generated as controlled by
the burst advance pin/ball (ADV/LD#). Use of burst
mode is optional. It is allowable to give an address for
each individual READ and WRITE cycle. BURST cycles
wrap around after the fourth access from a base
address.
To allow for continuous, 100 percent use of the data
bus, the pipelined ZBT SRAM uses a late LATE WRITE
cycle. For example, if a WRITE cycle begins in clock
cycle one, the address is present on rising edge one.
BYTE WRITEs need to be asserted on the same cycle as
the address. The data associated with the address is
required two cycles later, or on the rising edge of clock
cycle three.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed write
cycles. Individual byte enables allow individual bytes
to be written. During a BYTE WRITE cycle, BWa# con-
trols DQa pins/balls; BWb# controls DQb pins/balls;
BWc# controls DQc pins/balls; and BWd# controls
DQd pins/balls. Cycle types can only be defined when
an address is loaded, i.e., when ADV/LD# is LOW. Par-
ity/ECC bits are only available on the x18 and x36 ver-
sions.
The device is ideally suited for systems requiring
high bandwidth and zero bus turnaround delays.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
Dual Voltage I/O
The 3.3V V
DD
device is tested for 3.3V and 2.5V I/O
function. The 2.5V V
DD
device is tested for only 2.5V
I/O function.
18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1MY18P_16_D.fm – Rev. D, Pub. 2/03
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
Figure 3: Functional Block Diagram
1 Meg x 18
20
SA0, SA1, SA
MODE
CLK
CKE#
ADDRESS
REGISTER 0
20
18
SA1
SA1'
D1
Q1
SA0
SA0'
BURST
D0
Q0
LOGIC
20
K
WRITE ADDRESS
REGISTER 1
ADV/LD#
K
WRITE ADDRESS
REGISTER 2
20
20
ADV/LD#
BWa#
BWb#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
1 Meg x 9 x 2
18
WRITE
DRIVERS
18
MEMORY
ARRAY
18
S
E
N
S
E
A
M
P
S
18
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
18
D
A
T
A
S
T
E
E
R
I
N
G
18
O
U
T
P
U
T
B
U
F
F
E
R
S
18
DQs
DQPa
DQPb
E
E
18
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE#
CE#
CE2
CE2#
READ LOGIC
Figure 4: Functional Block Diagram
512K x 32/36
19
SA0, SA1, SA
MODE
CLK
CKE#
K
ADDRESS
REGISTER 0
19
17
SA1
SA1'
D1
Q1
SA0
SA0'
BURST
D0
Q0
LOGIC
19
ADV/LD#
K
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
19
19
ADV/LD#
BWa#
BWb#
BWc#
BWd#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
36
512K x 8 x 4
(x32)
WRITE
DRIVERS
36
512K x 9 x 4
36
(x36)
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
36
MEMORY
ARRAY
R
E
G
I
S
T
E
R
S
D
A
T
A
36
O
U
T
P
U
T
36
S
T
E
E
R
I
N
G
B
U
F
F
E
R
S
36
DQs
DQPa
DQPb
DQPc
DQPd
E
E
36
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
OE#
CE#
CE2
CE2#
READ LOGIC
NOTE:
1. Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball descriptions, and timing dia-
grams for detailed information.
18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1MY18P_16_D.fm – Rev. D, Pub. 2/03
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
Figure 5: Pin Layout (Top View)
100-Pin TQFP
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
V
DD
2
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
SA
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
SA
SA
SA
SA
SA
SA
SA
DNU3
DNU3
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
SA
SA
SA
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NF/DQPb
1
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
2
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NF/DQPa
1
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
DD
2
V
DD
V
DD
2
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
SA
SA
SA
SA
SA
SA
SA
DNU3
DNU3
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NOTE:
1. No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
2. Pins 14, 16, and 66 do not have to be connected directly to V
DD
if the input voltage is
³
V
IH
.
3. Pins 43 and 42 are reserved for address expansion; 36Mb and 72Mb, respectively.
.
18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1MY18P_16_D.fm – Rev. D, Pub. 2/03
NF/DQPc
1
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
DD
2
V
DD
V
DD2
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NF/DQPd
1
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
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