DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
•
Low on-resistance
R
DS(on)1
= 21 mΩ (MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 33 mΩ (MAX.) (V
GS
= 4.5 V, I
D
= 10 A)
R
DS(on)3
= 43 mΩ (MAX.) (V
GS
= 4.0 V, I
D
= 10 A)
•
Low C
iss
: C
iss
= 730 pF (TYP.)
•
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
2SK3366
2SK3366-Z
PACKAGE
TO-251
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
30
±20
±20
±80
30
1.0
150
–55 to + 150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
C
= 25 °C)
Total Power Dissipation (T
A
= 25 °C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty cycle
≤
1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
R
th(ch-C)
R
th(ch-A)
4.17
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14256EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
©
1999
2SK3366
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
I
D
= 20 A, V
DD
= 24 V, V
GS
= 10 V
I
D
= 10 A, V
GS(on)
= 10 V, V
DD
= 15 V,
R
G
= 10
Ω
TEST CONDITIONS
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 4.0 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
730
250
120
28
420
47
64
15
2.8
4.1
1.0
30
26
1.5
5
MIN.
TYP.
17.2
26
33
2.0
10
10
±10
MAX.
21
33
43
2.5
UNIT
mΩ
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
GS
V
GS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
90 %
90 %
I
D
PG.
R
G
R
G
= 10
Ω
0
I
D
10 %
V
GS (on)
90 %
R
L
V
DD
V
DD
50
Ω
V
GS
0
t
t = 1
µ
s
Duty Cycle
≤
1 %
D
Wave Form
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
2
Data Sheet D14256EJ1V0DS00
2SK3366
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
35
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
30
25
20
15
10
5
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature -
˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS
(o
n)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
V
GS
=10 V
Pulsed
Li
(a
tV
G
d
ite
m V)
0
=1
S
I
D(PULSE)
= 80 A
PW
I
D
- Drain Current - A
10
Po
1m
s
we
r
Di
ss
I
D
- Drain Current - A
I
D(DC)
=20 A
=1
00
µ
s
60
4.5 V
40
10
ipa
ms
im
ite
tio
nL
d
1.0
20
4.0 V
0.1
T
C
= 25˚C
Single Pulse
1.0
10
100
0
1
2
3
4
V
DS -
Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
I
D
- Drain Current - A
10
1
T
A
= 150˚C
75˚C
25˚C
−25˚C
−50˚C
0.1
0.01
0.001
0
1
2
3
4
5
6
V
GS
- Gate to Source Voltage - V
Data Sheet D14256EJ1V0DS00
3
2SK3366
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
R
th(ch-A)
= 125
˚C/W
100
10
R
th(ch-C)
= 4.17
˚C/W
1
Single Pulse
0.1
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
| y
fs
| - Forward Transfer Admittance - S
10
T
ch
=
−50˚C
−25˚C
25˚C
75˚C
150˚C
V
DS
= 10 V
Pulsed
30
20
I
D
= 10 A
1
10
0.1
0.1
1
10
100
0
5
10
15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS(off)
- Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
2.5
2
1.5
1
0.5
0
V
DS
= 10 V
I
D
= 1 mA
Pulsed
80
60
V
GS
= 4.0 V
4.5 V
40
10 V
20
0
0.1
1
10
100
−
50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14256EJ1V0DS00
2SK3366
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
V
GS
= 10 V
V
GS
= 4.0 V
40
4.5 V
4.5 V
10
30
10 V
20
0V
1
10
0
I
D
= 10 A
−
50
0
50
100
150
0.1
Pulsed
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
- Source to Drain Voltage - V
T
ch
- Channel Temperature -
˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
10000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
1000
t
f
100
t
d(on)
t
d(off)
1000
C
iss
C
oss
100
C
rss
10
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
10
0.01
0.1
1
10
100
1
0.1
V
DS
- Drain to Source Voltage - V
1
10
I
D
- Drain Current - A
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
30
V
DD
= 24 V
15 V
6V
12
10
8
V
GS
6
4
V
DS
2
10
15
20
0
100
20
10
10
1
0.1
1
10
100
0
5
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/µs
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
I
D
= 20 A
14
Data Sheet D14256EJ1V0DS00
5
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