DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3424
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3424 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3424
2SK3424-ZK
2SK3424-ZJ
PACKAGE
TO-220AB
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
FEATURES
•
4.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 11.5 mΩ MAX. (V
GS
= 10 V, I
D
= 24 A)
•
Low gate charge
Q
G
= 34 nC TYP. (I
D
= 48 A, V
DD
= 24 V, V
GS
= 10 V)
•
Built-in gate protection diode
•
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±48
±192
1.5
50
150
−55
to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14640EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
2SK3424
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
Drain Leakage Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 10 V
I
D
= 48 A
I
F
= 48 A, V
GS
= 0 V
I
F
= 48 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 24 A
V
GS
= 10 V, I
D
= 24 A
V
GS
= 4.5 V, I
D
= 24 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V , I
D
= 24 A
V
GS(on)
= 10 V
R
G
= 10
Ω
1.5
13
7.7
10.5
1900
580
270
14
13
61
22
34
6.4
9.1
1.0
34
26
11.5
17.0
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
90%
V
GS
V
GS
Wave Form
I
G
= 2 mA
90%
10%
R
L
V
DD
0
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
Wave Form
0
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D14640EJ2V0DS
2SK3424
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
V
GS
=10 V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
V
DS
= 10 V
I
D
- Drain Current - A
150
7.0 V
100
100
4.5 V
10
T
ch
=
−40˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
1
2
3
4
5
6
50
Pulsed
0
0
1
2
3
4
1
0.1
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
V
GS(off)
- Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
V
DS
= 10 V
I
D
= 1 mA
10
T
ch
= 150˚C
75˚C
25˚C
−40˚C
1
0
50
100
150
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
I
D
= 48 A
24 A
10 A
20
7.0 V
V
GS
= 4.5 V
10
10 V
10
5
0
0
5
10
15
20
0
0.1
1
10
100
1000
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Data Sheet D14640EJ2V0DS
3
2SK3424
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
SD
- Diode Forward Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
I
D
= 24 A
16
V
GS
= 4.5 V
12
7.0 V
10 V
8
Pulsed
V
GS
= 10 V
100
4.5 V
10
1
0V
4
0
−50
0.1
0
50
100
150
0.01
0
0.5
1
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0 V
f = 1 MHz
C
iss
1000
100
t
d(off)
t
f
t
d(on)
10
C
oss
C
rss
100
0.1
1
10
100
t
r
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
100
1
0.1
1
10
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
I
D
= 48 A
25
20
15
V
GS
10
5
V
DS
0
0
10
20
30
40
0
4
V
DD
= 24 V
15 V
6V
12
V
GS
- Gate to Source Voltage - V
100
8
10
1
0.1
1
10
100
I
SD
- Diode Forward Current - A
Q
G
- Gate Charge - nC
4
Data Sheet D14640EJ2V0DS
2SK3424
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
80
60
40
60
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160
20
0
0
20
40
60
80
100
120 140 160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
5
1000
FORWARD BIAS SAFE OPERATING AREA
I
D(pulse)
I
D
- Drain Current - A
PW
10
0
100
d
ite )
im 0 V
1
)
L
on
=
S(
S
R
D
V
G
I
D(DC)
(@
=
10
µ
s
30
0
µ
s
Po
we
r
10
Di
ss
ipa
tio
n
m
s
m
10
s
m
s
3
1
µ
s
Lim
ite
d
DC
1
0.1
T
C
= 25˚C
Single Pulse
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
R
th(ch-C)
= 2.5˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - sec
Data Sheet D14640EJ2V0DS
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
