2SK3390
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-846 (Z)
1st. Edition
Aug.2001
Features
•
High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W,
ηadd=
60 % min. (f = 836 MHz)
•
Compact package capable of surface mounting
Outline
RP8P
D
3
1
G
2
S
2
1
3
1. Gate
2. Source
3. Drain
Note:
Marking is “IX”.
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
2SK3390
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
<
1sec, Tch
<
150 °C
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Note1
Pch
Note2
Tch
Tstg
Ratings
17
±10
1
2.5
20
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
(Tc = 25°C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Added Efficiency
Symbol Min
I
DSS
I
GSS
V
GS(off)
Ciss
Coss
Pout
ηadd
—
—
2.2
—
—
6.31
60
Typ
—
—
—
27.5
10.5
—
—
Max
10
±5
3.0
—
—
—
—
Unit
µA
µA
V
pF
pF
W
%
Test Conditions
V
DS
= 13.7 V, V
GS
= 0
V
GS
= ±10V, V
DS
= 0
I
D
= 1mA, V
DS
= 13.7V
V
GS
= 5V, V
DS
= 0, f = 1MHz
V
DS
= 13.7V, V
GS
= 0, f = 1MHz
V
DS
= 13.7V, I
DO
= 0.25A
f = 836 MHz, Pin = 126 mW
V
DS
= 13.7V, I
DO
= 0.25A
f = 836 MHz, Pin = 126 mW
Rev.0, Aug. 2001, page 2 of 7
2SK3390
Main Characteristics
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
5
10 V
9V
7V
8V
Pch (W)
40
30
Channel Power Dissipation
I
D
(A)
4
3
6V
20
Drain Current
2
5V
V
GS
= 4 V
Pulse Test
10
1
0
50
100
150
Tc (°C)
200
0
Case Temperature
2
4
6
Drain to Source Voltage
8
10
V
DS
(V)
Typical Transfer Characteristics
Tc = 75°C
25°C
- 25°C
Forward Transfer Admittance |y fs | (S)
Forward Transfer Admittance vs.
Drain Current
10
3
1
0.3
0.1
V
DS
= 13.7 V
Pulse Test
0.1
0.3
1
3
10
2.5
I
D
(A)
2
Tc = - 25°C
25°C
1.5
Drain Current
75°C
1
0.5
V
DS
= 13.7 V
Pulse Test
0
2
3
4
5
Gate to Source Voltage
6
7
V
GS
(V)
0.03
0.01
0.01 0.03
Drain Current I
D
(A)
Rev.0, Aug. 2001, page 3 of 7
2SK3390
Drain to Source Saturatioin Voltage vs.
Drain Current
3
1
0.3
0.1
0.03
0.01
V
GS
= 10 V
Pulse Test
10
Tc = - 25°C
75°C
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Gate to Source Cutoff Voltage vs.
Ambient Temperature
3.6
10
Drain to Source Saturation Voltage
V
DS(sat)
(V)
25°C
3.2
2.8
10 mA
2.4
1 mA
I
D
= 0.
1 mA
2.0
V
DS
= 13.7 V
1.6
- 25
0
25
50
75
100
Ta (°C)
125
0.003
0.001
1
3
0.01 0.03 0.1 0.3
Drain Current I
D
(A)
Ambient Temperature
Input Capacitance vs.
Gate to Source Voltage
29
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
Output Capacitance vs.
Drain to Source Voltage
100
28
30
27
10
26
25
24
-10
3
V
GS
= 0
f = 1 MHz
1
0.1
0.3
1
3
10
30
V
DS
= 0
f = 1 MHz
-6
-2
2
6
10
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS
(V)
Rev.0, Aug. 2001, page 4 of 7
2SK3390
Reverse Transfer Capacitance Crss (pF)
Reverse Transfer Capacitance vs.
Drain to Gate Votage
10
10
Output Power, Added Efficiency vs.
Input Power
Pout
100
Output Power Pout (W)
3
8
η
add
80
1
0.3
4
V
DS
= 13.7 V
I
DO
= 0.25 A
f = 836 MHz
50
100
150
200
40
2
V
GS
= 0
f = 1 MHz
0.1
0.1
0.3
1
3
10
30
0
0
20
250
0
Drain to Gate Voltege V
DG
(V)
Input power Pin (mW)
Rev.0, Aug. 2001, page 5 of 7
Added Efficiency
6
60
η
add (%)
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