K
NOX
S
EMICONDUCTOR,
I
NC.
GLASS - LEADED
GENERAL PURPOSE ABRUPT VARACTOR DIODES
KSV2101 - KSV2115
TYPE
NUMBER
KSV2101
KSV2102
KSV2103
KSV2104
KSV2105
KSV2106
KSV2107
KSV2108
KSV2109
KSV2110
KSV2111
KSV2112
KSV2113
KSV2114
KSV2115
CAPACITANCE
@ - 4 Vdc
f = 1 MHz (pF)
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
MIN QUALITY FACTOR
Q @ - 4 Vdc
f = 50 MHz
450
450
400
400
400
350
350
300
200
150
150
150
150
100
100
CAPACITANCE RATIO
f = 1 MHz C•2V / C•30V
MIN
MAX
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.6
3.3
2.6
3.3
2.6
3.3
2.6
3.3
Package Style
DC Power Dissipation
Reverse Breakdown Voltage
Max Reverse Current (I
R
)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance:
@ Ta = 25°C
@ 10µA
@ Ta = 25° C
Standard Device
Suffix A
DO-7
400 mW
30 V Min
0.1 µA @ 25 Vdc
-65 to + 175° C
-65 to + 200° C
±10%
±5%
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