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UL62H1708BSK55: 产品描述Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.450 INCH, SOP-32; 产品类别存储存储; 文件大小91KB，共9页; 制造商Zentrum Mikroelektronik Dresden AG (IDT)

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UL62H1708BSK55概述

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.450 INCH, SOP-32

UL62H1708BSK55规格参数

参数名称	属性值
是否Rohs认证	不符合
零件包装代码	SOIC
包装说明	SOP,
针数	32
Reach Compliance Code	compliant
ECCN代码	EAR99
最长访问时间	55 ns
JESD-30 代码	R-PDSO-G32
JESD-609代码	e0
长度	20.445 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX8
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
认证状态	Not Qualified
座面最大高度	3 mm
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30
宽度	11.3 mm
Base Number Matches	1

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Preliminary

Features

131072 x 8 bit static CMOS RAM

35 and 55 ns Access Time

Common data inputs and

UL62H1708B

Low Voltage Automotive Fast 128K x 8 SRAM

Description

The UL62H1708B is a static RAM

manufactured using a CMOS pro-

cess technology with the following

operating modes:

- Read

- Standby

- Write

- Data Retention

The memory array is based on a

6-Transistor cell.

The circuit is activated by the rising

edge of E2 (at E1 = L), or the falling

edge of E1 (at E2 = H). The

address and control inputs open

simultaneously. According to the

information of W and G, the data

inputs, or outputs, are active.

During the active state (E1 = L and

E2 = H) each address change

leads to a new Read or Write cycle.

In a Read cycle, the data outputs

are activated by the falling edge of

G, afterwards the data word will be

available at the outputs DQ0-DQ7.

After the address change, the data

outputs go High-Z until the new

information is available. The data

outputs have no preferred state. If

the memory is driven by CMOS

levels in the active state, and if

there is no change of the address,

data input and control signals W or

G, the operating current (I

= 0 mA)

drops to the value of the operating

current in the Standby mode. The

Read cycle is finished by the falling

edge of E2 or W, or by the rising

edge of E1, respectively.

Data retention is guaranteed down

to 2 V. With the exception of E1

and E2, all inputs consist of NOR

gates, so that no pull-up/pull-down

resistors are required.

data outputs

Three-state outputs

Typ. operating supply current

35 ns: 45mA

55 ns: 30mA

Standby current <100µA at 125°C

Power supply voltage 2.5 V

Operating temperature range

-40 °C to 85 °C

-40 °C to 125 °C

CECC 90000 Quality Standard

ESD protection > 2000 V

(MIL STD 883C M3015.7)

Latch-up immunity >100 mA

Package: SOP32 (300/330 mil)

Pin Configuration

Pin Description

n.c.

A16

A14

A12

DQ0

DQ1

DQ2

VSS

VCC

A15

A13

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

Signal Name

A0 - A16

DQ0 - DQ7

VCC

VSS

n.c.

Signal Description

Address Inputs

Data In/Out

Chip Enable 1

Chip Enable 2

Output Enable

Write Enable

Power Supply Voltage

Ground

not connected

SOP

Top View

November 01, 2001

UL62H1708BSK55相似产品对比

	UL62H1708BSK55	UL62H1708BSA35	UL62H1708BSK35	UL62H1708BSA55	UL62H1708BS1K35	UL62H1708BS1A35
描述	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.450 INCH, SOP-32	Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 0.450 INCH, SOP-32	Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 0.450 INCH, SOP-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.450 INCH, SOP-32	Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 0.330 INCH, SOP-32	Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 0.330 INCH, SOP-32
零件包装代码	SOIC	SOIC	SOIC	SOIC	SOIC	SOIC
包装说明	SOP,	SOP,	SOP,	SOP,	SOP,	SOP,
针数	32	32	32	32	32	32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	55 ns	35 ns	35 ns	55 ns	35 ns	35 ns
JESD-30 代码	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端子数量	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	125 °C	85 °C	125 °C	85 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	SOP	SOP	SOP	SOP	SOP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	AUTOMOTIVE	INDUSTRIAL	AUTOMOTIVE	INDUSTRIAL	AUTOMOTIVE
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
是否Rohs认证	不符合	不符合	不符合	不符合	-	-
JESD-609代码	e0	e0	e0	e0	-	-
长度	20.445 mm	20.445 mm	20.445 mm	20.445 mm	-	-
湿度敏感等级	3	3	3	3	-	-
峰值回流温度（摄氏度）	225	225	225	225	-	-
座面最大高度	3 mm	3 mm	3 mm	3 mm	-	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-	-
处于峰值回流温度下的最长时间	30	30	30	30	-	-
宽度	11.3 mm	11.3 mm	11.3 mm	11.3 mm	-	-
Base Number Matches	1	1	1	1	-	-

UL62H1708BSK55

UL62H1708BSK55概述

UL62H1708BSK55规格参数

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