DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3402
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3402 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
★
ORDERING INFORMATION
PART NUMBER
2SK3402
2SK3402-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Low On-State Resistance
R
DS(on)1
= 15 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 22 mΩ MAX. (V
GS
= 4.0 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 3200 pF TYP.
•
Built-in Gate Protection Diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±20
±36
±144
40
1.0
150
–55 to +150
35
123
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14473EJ3V1DS00 (3rd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark
★
shows major revised points.
1999, 2000
2SK3402
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 18 A
V
GS
= 10 V, I
D
= 18 A
V
GS
= 4.0 V, I
D
= 18 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 18 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
13
2.0
27
12
15
3200
520
270
36
310
170
180
2.5
Drain to Source On-state Resistance
15
22
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 36 A
I
F
= 36 A, V
GS
= 0 V
I
F
= 36 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
61
8.2
17
1.0
48
89
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14473EJ3V1DS
2SK3402
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
60
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100
120 140 160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
10
10
PW
I
D
- Drain Current - A
100
d
ite V)
Lim 10
)
on S
=
S(
I
D(DC)
R
D
t V
G
(a
=
10
10
DC
ms
Po
Lim wer
ite Diss
d
ipa
tio
n
1m
s
0
µ
s
µ
s
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
100
R
th(ch-A)
= 125˚C/W
10
R
th(ch-C)
= 3.13˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14473EJ3V1DS
3
2SK3402
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
Pulsed
160
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
I
D
- Drain Current - A
1
T
A
=
−55˚C
25˚C
75˚C
150˚C
I
D
- Drain Current - A
10
120
V
GS
= 10 V
80
4.0 V
40
0.1
0.01
1
2
3
4
V
DS
= 10 V
5
6
0
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
40
10
T
A
= 150˚C
75˚C
25˚C
−55˚C
30
1
20
I
D
= 18 A
10
0.1
0.01
0.01
0
0
2
4
6
8
10
12
14 16 18 20
V
GS
- Gate to Source Voltage - V
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
Pulsed
35
30
25
20
V
GS
= 4.0 V
15
10
5
0
1
10
100
1000
I
D
- Drain Current - A
10 V
V
GS(th)
- Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= 10 V
I
D
= 1 mA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14473EJ3V1DS
2SK3402
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
25
20
15
10
5
0
I
D
= 18 A
−50
0
50
100
150
V
GS
= 4.0 V
10 V
Pulsed
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
V
GS
= 10 V
10
V
GS
= 0 V
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature -
˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
F(S-D)
- Body Diode Forward Voltage - V
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
t
r
t
f
t
d(off)
1000
C
oss
C
rss
100
100
t
d(on)
10
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
V
DS
- Drain to Source Voltage - V
70
60
50
40
30
20
10
0
0
I
D
= 36 A
10
20
30
40
50
60
70
V
DS
V
DD
= 48 V
30 V
12 V
V
GS
14
12
10
8
6
4
2
80
100
10
1
0.1
1
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
16
Data Sheet D14473EJ3V1DS
5
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