2SK3363-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
3. Source
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
T
ch
T
stg
Rating
30
±50
±200
±16
1735
80
+150
Unit
V
A
A
V
mJ
W
°C
°C
-55 to +150
*1 L=0.925mH, Vcc=12V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=30V
V
GS
=0V
V
GS
=±16V V
DS
=0V
I
D
=50A V
GS
=4V
I
D
=50A V
GS
=10V
I
D
=50A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V I
D
=100A
V
GS
=10V
R
GS
=10
Ω
L=100µH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
50
1.0
65
0.12
1.5
Min.
30
1.0
Tch=25°C
Tch=125°C
Typ.
1.5
10
0.2
10
8.0
5.3
70
3900
2000
850
17
70
250
180
Max.
2.0
500
1.0
100
10. 5
6.8
5850
3000
1280
30
110
380
270
Units
V
V
µA
mA
nA
mΩ
S
pF
35
ns
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.56
75.0
Units
°C/W
°C/W
1
2SK3363-01
Characteristics
Power Dissipation
PD=f(Tc)
100
10
3
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25°C
80
10
2
t=
1µs
10µs
100µs
D.C.
60
1ms
PD [W]
ID [A]
10
1
10ms
100ms
0
40
10
20
t
D=
T
t
T
0
0
25
50
75
100
125
150
10
-1
10
-1
10
0
10
1
10
2
10
3
Tc [°C]
VDS [V]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
200
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
VGS=15V 10V
8V
5V
150
4.5V
4.0V
100
ID [A]
3.0V
2.5V
2.0V
2
3
4
5
ID [A]
10
100
3.5V
50
1
0
0
1
0.1
0
1
2
3
4
5
6
VDS [V]
VGS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
10
3
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
40
VGS=
2.0V
2.5V
3.0V
30
2
10
RDS(on) [m
Ω
]
gfs [s]
20
3.5V
10
1
4.0V
10
4.5V
5V
8V
10V
15V
10
0
0
10
0
10
1
10
2
10
3
0
50
100
150
200
ID [A]
ID [A]
2
2SK3363-01
Drain-source on-state resistance
RDS(on)=f(Tch):ID=50A,VGS=10V
20
3.0
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
2.5
15
2.0
VGS(th) [V]
max.
RDS(on)[m
Ω
]
10
max.
1.5
typ.
1.0
typ.
5
0.5
min.
0
-50
0
50
100
150
0.0
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
100n
25
Typical Gate Charge Characteristics
VGS=f(Qg):ID=100A,Tch=25°C
25
VDS
VGS
20
20
10n
15
Ciss
Coss
1n
Crss
5
Vcc=24V
VDS [V]
15V
15
VGS [V]
C [F]
10
10
5
100p
-2
10
10
-1
10
0
10
1
10
2
0
0
50
100
150
200
250
0
300
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
220
200
180
160
140
120
10
4
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=15V,VGS=10V,RG=10
Ω
10
3
td(off)
IF [A]
100
80
60
40
20
10V
5V
VGS=0V
t [ns]
tf
10
2
tr
td(on)
10
-1
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
VSD [V]
ID [A]
t-ID
3
2SK3363-01
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch)
60
10
1
FUJI POWER MOSFET
Transient thermal impedance
Zthch=f(t) parameter:D=t/T
50
0
10 D=0.5
Zthch-c [K/W]
40
0.2
0.1
10
-1
I(AV) [A]
0.05
0.02
0.01
t
D=
T
t
T
30
20
10
-5
10
10
-2
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t [s]
0
0
50
100
150
Starting Tch [°C]
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=12V, I(AV)<=50A
2000
1750
1500
1250
Eas [mJ]
1000
750
500
250
0
0
50
100
150
Starting Tch [°C]
4
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