2SK3338-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOS-FET
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AV *1
P
D
T
ch
T
stg
Rating
500
±20
±80
±30
20
775
340
+150
-55 to +150
Unit
V
A
A
V
A
mJ
W
°C
<
*2 Tch=150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 L=3.56mH, Vcc=50V
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=500V
V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=20A
V
GS
=10V
R
GS
=10
Ω
Vcc=250V
I
D
=20A
V
GS
=10V
L=3.56 mH T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
500
2.5
T
ch
=25°C
T
ch
=125°C
Typ.
Max.
Units
V
V
µA
mA
nA
Ω
S
pF
9
3.0
3.5
10
500
0.2
1.0
10
100
0.21
0.27
18
3350
5025
480
720
200
300
27
40
100
150
250
375
100
150
155
235
38
60
50
75
1.1
600
11.0
1.65
ns
nC
20
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.368
50.0
Units
°C/W
°C/W
1
2SK3338-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
400
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
10
300
2
t=
1µs
10µs
D.C.
PD [W]
200
ID [A]
10
1
100µs
1ms
10ms
100
10
0
t
D=
T
t
T
100ms
0
0
25
50
75
100
125
150
10
-1
10
0
10
1
10
2
10
3
Tc [°C]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
60
15V
50
20V
10V
6.5V
100
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
6.0V
40
10
ID [A]
5.5V
30
20
5.0V
ID[A]
1
0.1
24
10
VGS=4.5V
0
0
2
4
6
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
8
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
100
0.6
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
VGS=4.5V
0.5
5.0V
5.5V
6.0V
10
0.4
6.5V
10V
RDS(on) [
Ω
]
gfs [S]
0.3
15V
20V
1
0.2
0.1
0.1
0.1
0.0
1
10
100
0
10
20
30
40
50
60
ID [A]
ID [A]
2
2SK3338-01
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
0.8
5.0
4.5
0.7
4.0
0.6
3.5
0.5
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
max.
VGS(th) [V]
RDS(on) [
Ω
]
3.0
2.5
2.0
typ.
max.
0.4
0.3
1.5
0.2
typ.
0.1
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
min.
0.0
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A,Tch=25°C
25
10
-7
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
20
10
-8
Vcc= 100V
250V
15
400V
Ciss
VGS [V]
C [F]
10
-9
10
Coss
Crss
10
-10
5
0
0
50
100
150
200
250
300
350
10
-11
10
-2
10
-1
10
0
10
1
10
2
Qg [C]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
100
10
4
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
10
10
3
IF [A]
td(off)
t [ns]
tf
1
10
2
tr
td(on)
1
0.1
0.00
10
0.25
0.50
0.75
1.00
1.25
1.50
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3338-01
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=20A
1000
FUJI POWER MOSFET
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
10
0
0.5
800
Zth(ch-c) [K/W]
10
-1
0.2
0.1
0.05
0.02
600
EAV [mJ]
10
-2
0.01
0
t
D=
T
t
T
400
200
10
-5
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t [s]
0
0
25
50
75
100
125
150
starting Tch [°C]
4
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