DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3295
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3295 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3295
2SK3295-S
2SK3295-ZK
2SK3295-ZJ
PACKAGE
TO-220AB
TO-262
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
FEATURES
•
4.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 18 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
•
Low gate charge
Q
G
= 16 nC TYP. (I
D
= 35 A, V
DD
= 16 V, V
GS
= 10 V)
•
Built-in gate protection diode
•
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±35
±140
1.5
35
150
−55
to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14064EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
1999, 2000
2SK3295
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 35 A
I
F
= 35 A, V
GS
= 0 V
I
F
= 35 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 18 A
V
GS
= 10 V, I
D
= 18 A
V
GS
= 4.5 V, I
D
= 18 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V , I
D
= 18 A
V
GS(on)
= 10 V
R
G
= 10
Ω
1.0
7.5
13
21
720
370
180
85
2000
65
270
16
3.1
5.2
1.0
28
14
18
27
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
PG.
R
G
V
DD
I
D
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
V
GS
Wave Form
0
10%
V
GS
(on)
90%
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
90%
90%
PG.
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D14064EJ2V0DS
2SK3295
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
160
V
GS
=10 V
I
D
- Drain Current - A
1000
100
FORWARD TRANSFER CHARACTERISTICS
Pulsed
V
DS
= 10 V
120
I
D
- Drain Current - A
7.0 V
10
1
0.1
0.01
T
ch
=
−50˚C
−25˚C
25˚C
75˚C
150˚C
80
40
4.5 V
0
Pulsed
0
1
2
3
0.001
0
1
2
3
4
5
6
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS(off)
- Gate to Source Cut-off Voltage - V
3
V
DS
= 10 V
I
D
= 1 mA
| y
fs
| - Forward Transfer Admittance - S
100
2
10
T
ch
= 150˚C
75˚C
25˚C
−50˚C
1
1
0
−50
0
50
100
150
0.1
0.1
1
10
V
DS
= 10 V
Pulsed
100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
50
Pulsed
40
30
I
D
= 28 A
18 A
7A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
Pulsed
40
30
V
GS
= 4.5 V
7.0 V
10 V
20
20
10
10
0
1
10
100
1000
I
D
- Drain Current - A
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
Data Sheet D14064EJ2V0DS
3
2SK3295
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
I
D
= 18 A
Pulsed
V
GS
= 4.5 V
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS
= 10 V
4.5 V
10
1
0V
I
SD
- Diode Forward Current - A
100
30
7.0 V
20
10 V
10
0.1
0
−50
0
50
100
150
0.01
0
0.4
0.8
1.2
1.6
2.0
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
10000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
1000
t
f
100
t
d(off)
10
1000
C
iss
C
oss
100
C
rss
t
d(on)
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
Ω
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
I
D
= 35 A
14
15
V
DD
= 16 V
10 V
4V
12
10
V
GS
8
6
5
V
DS
0
0
5
10
15
Q
G
- Gate Charge - nC
4
2
0
20
16
V
GS
- Gate to Source Voltage - V
100
10
10
1
0.1
di/dt = 100 A/
µ
s
V
GS
= 0 V
1
10
100
I
SD
- Diode Forward Current - A
4
Data Sheet D14064EJ2V0DS
2SK3295
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
dT - Percentage of Rated Power - %
100
80
60
40
P
T
- Total Power Dissipation - W
0
20
40
60
80
120 140
160
40
30
20
10
20
0
100
0
0
20
40
60
80
100
120 140
160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
!
1000
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
I
D(pulse)
100
10
d
ite )
im 0 V
1
)
L
on
=
S(
S
R
D
V
G
(@
I
D(DC)
P
ow
er
PW
=1
0
µ
s
Di
ss
ipa
tio
n
10
0
µ
s
30
0
µ
s
1m
s
3
10 ms
m
s
1
0.1
T
C
= 25˚C
Single Pulse
Lim
ite
d
DC
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
R
th(ch-C)
= 3.57˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - sec
Data Sheet D14064EJ2V0DS
5
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