Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
参数名称 | 属性值 |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
其他特性 | LOW CONDUCTION LOSS |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 6.2 A |
集电极-发射极最大电压 | 1200 V |
配置 | SINGLE |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | MOTOR CONTROL |
晶体管元件材料 | SILICON |
标称断开时间 (toff) | 75 ns |
标称接通时间 (ton) | 13 ns |
Base Number Matches | 1 |
HGTP1N120CN | HGTD1N120CNS | HGTD1N120CNS9A | |
---|---|---|---|
描述 | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown | unknown | unknown |
其他特性 | LOW CONDUCTION LOSS | LOW CONDUCTION LOSS | LOW CONDUCTION LOSS |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 6.2 A | 6.2 A | 6.2 A |
集电极-发射极最大电压 | 1200 V | 1200 V | 1200 V |
配置 | SINGLE | SINGLE | SINGLE |
JEDEC-95代码 | TO-220AB | TO-252AA | TO-252AA |
JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 2 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | YES | YES |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称断开时间 (toff) | 75 ns | 75 ns | 75 ns |
标称接通时间 (ton) | 13 ns | 13 ns | 13 ns |
厂商名称 | - | Harris | Harris |
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